Abstract
The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.
Original language | English |
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Pages (from-to) | 485-492 |
Number of pages | 8 |
Journal | Applied Surface Science |
Volume | 94-95 |
DOIs | |
Publication status | Published - 1996 Mar |
Externally published | Yes |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics