STM observation of rapidly cooled Si(111) vicinal surfaces

F. Katsuki; K. Kamei

doi:10.1016/0169-4332(95)00414-9

STM observation of rapidly cooled Si(111) vicinal surfaces

F. Katsuki^*, K. Kamei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.

Original language	English
Pages (from-to)	485-492
Number of pages	8
Journal	Applied Surface Science
Volume	94-95
DOIs	https://doi.org/10.1016/0169-4332(95)00414-9
Publication status	Published - 1996 Mar
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics

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10.1016/0169-4332(95)00414-9

Cite this

@article{d6ab87df5a4e40b8893ac4d228ef8d57,

title = "STM observation of rapidly cooled Si(111) vicinal surfaces",

abstract = "The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [12{\=3}] and [{\=1}{\=2}3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.",

author = "F. Katsuki and K. Kamei",

year = "1996",

month = mar,

doi = "10.1016/0169-4332(95)00414-9",

language = "English",

volume = "94-95",

pages = "485--492",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - STM observation of rapidly cooled Si(111) vicinal surfaces

AU - Katsuki, F.

AU - Kamei, K.

PY - 1996/3

Y1 - 1996/3

N2 - The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.

AB - The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.

UR - http://www.scopus.com/inward/record.url?scp=16144369444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=16144369444&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(95)00414-9

DO - 10.1016/0169-4332(95)00414-9

M3 - Article

AN - SCOPUS:16144369444

VL - 94-95

SP - 485

EP - 492

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

STM observation of rapidly cooled Si(111) vicinal surfaces

Abstract

ASJC Scopus subject areas

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