The step arrangements on the surfaces of rapidly cooled Si(111) misoriented in [123̄] and [1̄2̄3] are investigated. We show that the step arrangements on the quenched surface are greatly influenced upon the annealing and cooling conditions. We also present the growth process of the (7 × 7) domains on cooling rapidly across the (1 × 1)-(7 × 7) transition temperature.
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics