Straggling in energy loss of energetic heavy ions (Z ≤ 8) in thick silicon absorber

Nobuyuki Hasebe, Toshio Atarashiya, Shingo Mitani, Tadayoshi Doke, Jun Kikuchi, Takeshi Takashima, Kenji Itsumi, Masanori Kobayashi, Toshisuke Kashiwagi, Katuaki Nagata

    Research output: Contribution to journalArticle

    Abstract

    The energy loss distributions of heavy ions (Z ≤ 8) with high energies (2 MeV/u 50 MeV/u) in thick silicon detectors with uniform thickness have been measured in a wide range of fractional energy loss, ΔE/E0, where ΔE is the energy loss and E0 is the initial energy of incident ions. The measured distributions of energetic He, Li, Be, B and C ions are in good agreement with those predicted from Livingston-Bethe's theory when ΔE/E0 < 0.2. However, the distributions for large fractional energy losses ΔE/E0 > 0.2. which are much wider than those expected from the theory, are approximately expressed by Stoquert's method considering the effect of velocity decrease into Livingston-Bethe's theory. In the previous experiment of the energy loss of heavy ions from K to Fe in thick Si detectors, Hasebe et al. obtained consistent results for heavier elements. By conbining the results in the previous and this works, it is concluded that the straggling in energy loss of heavy ions from proton to Fe with energies from about 5 MeV/u to a few hundred MeV/u in thick Si-absorber is explained by Stoquert's method.

    Original languageEnglish
    Pages (from-to)1556-1561
    Number of pages6
    JournalJournal of the Physical Society of Japan
    Volume68
    Issue number5
    Publication statusPublished - 1999 May

      Fingerprint

    Keywords

    • Energy loss
    • Heavy ion
    • Livingston-Bethe's theory, Bohr's thoery
    • Si absorber
    • Straggling in energy loss

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Hasebe, N., Atarashiya, T., Mitani, S., Doke, T., Kikuchi, J., Takashima, T., Itsumi, K., Kobayashi, M., Kashiwagi, T., & Nagata, K. (1999). Straggling in energy loss of energetic heavy ions (Z ≤ 8) in thick silicon absorber. Journal of the Physical Society of Japan, 68(5), 1556-1561.