Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

M. Wada, S. Araki, T. Kudou, T. Umezawa, S. Nakajima, T. Ueda

Research output: Contribution to journalArticle

Abstract

The strain-balanced InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of 42% strained InAsP wells, InP barriers and 2% strained InGaAs layers, where the strained InP/InAsP/InP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.

Original languageEnglish
Pages (from-to)1744-1745
Number of pages2
JournalElectronics Letters
Volume38
Issue number25
DOIs
Publication statusPublished - 2002 Dec 5
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wada, M., Araki, S., Kudou, T., Umezawa, T., Nakajima, S., & Ueda, T. (2002). Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors. Electronics Letters, 38(25), 1744-1745. https://doi.org/10.1049/el:20021160