Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

M. Wada, S. Araki, T. Kudou, T. Umezawa, S. Nakajima, T. Ueda

Research output: Contribution to journalArticle

Abstract

The strain-balanced InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of 42% strained InAsP wells, InP barriers and 2% strained InGaAs layers, where the strained InP/InAsP/InP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.

Original languageEnglish
Pages (from-to)1744-1745
Number of pages2
JournalElectronics Letters
Volume38
Issue number25
DOIs
Publication statusPublished - 2002 Dec 5
Externally publishedYes

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Photodetectors
Semiconductor quantum wells
Infrared radiation
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wada, M., Araki, S., Kudou, T., Umezawa, T., Nakajima, S., & Ueda, T. (2002). Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors. Electronics Letters, 38(25), 1744-1745. https://doi.org/10.1049/el:20021160

Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors. / Wada, M.; Araki, S.; Kudou, T.; Umezawa, T.; Nakajima, S.; Ueda, T.

In: Electronics Letters, Vol. 38, No. 25, 05.12.2002, p. 1744-1745.

Research output: Contribution to journalArticle

Wada, M, Araki, S, Kudou, T, Umezawa, T, Nakajima, S & Ueda, T 2002, 'Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors', Electronics Letters, vol. 38, no. 25, pp. 1744-1745. https://doi.org/10.1049/el:20021160
Wada, M. ; Araki, S. ; Kudou, T. ; Umezawa, T. ; Nakajima, S. ; Ueda, T. / Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors. In: Electronics Letters. 2002 ; Vol. 38, No. 25. pp. 1744-1745.
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