Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa

Research output: Contribution to journalConference article

30 Citations (Scopus)

Abstract

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

Original languageEnglish
Pages (from-to)217-221
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume26
Issue number1-4
DOIs
Publication statusPublished - 2005 Feb 1
Externally publishedYes
EventInternational Conference on Quantum Dots - Banff, Alberta, Canada
Duration: 2004 May 102004 May 13

Keywords

  • Electronic states
  • Stacked quantum dots
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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