Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

T. Saito, T. Nakaoka, Takaaki Kakitsuka, Y. Yoshikuni, Y. Arakawa

Research output: Contribution to journalConference article

28 Citations (Scopus)

Abstract

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

Original languageEnglish
Pages (from-to)217-221
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume26
Issue number1-4
DOIs
Publication statusPublished - 2005 Feb 1
Externally publishedYes
EventInternational Conference on Quantum Dots - Banff, Alberta, Canada
Duration: 2004 May 102004 May 13

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strain distribution
Electronic states
Semiconductor quantum dots
quantum dots
spacing
electronics
Electronic structure
electronic structure
Laser modes
Ground state
gallium arsenide
indium arsenide
continuums
ground state

Keywords

  • Electronic states
  • Stacked quantum dots
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm. / Saito, T.; Nakaoka, T.; Kakitsuka, Takaaki; Yoshikuni, Y.; Arakawa, Y.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 26, No. 1-4, 01.02.2005, p. 217-221.

Research output: Contribution to journalConference article

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AU - Nakaoka, T.

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AU - Yoshikuni, Y.

AU - Arakawa, Y.

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N2 - We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

AB - We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

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