Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

Hoang Phuong Phan; Tuan Khoa Nguyen; Toan Dinh; Han Hao Cheng; Fengwen Mu; Alan Iacopi; Leonie Hold; Dzung Viet Dao; Tadatomo Suga; Debbie G. Senesky; Nam Trung Nguyen

doi:10.1002/pssa.201800288

Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

Hoang Phuong Phan^*, Tuan Khoa Nguyen, Toan Dinh, Han Hao Cheng, Fengwen Mu, Alan Iacopi, Leonie Hold, Dzung Viet Dao, Tadatomo Suga, Debbie G. Senesky, Nam Trung Nguyen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C-SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.

Original language	English
Article number	1800288
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	215
Issue number	24
DOIs	https://doi.org/10.1002/pssa.201800288
Publication status	Published - 2018 Dec 19
Externally published	Yes

Keywords

MEMS
piezoresistance
silicon carbide
strain engineering
wafer bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.201800288

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Phan, H. P., Nguyen, T. K., Dinh, T., Cheng, H. H., Mu, F., Iacopi, A., Hold, L., Dao, D. V., Suga, T., Senesky, D. G., & Nguyen, N. T. (2018). Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement. Physica Status Solidi (A) Applications and Materials Science, 215(24), [1800288]. https://doi.org/10.1002/pssa.201800288

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abstract = "This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C-SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.",

keywords = "MEMS, piezoresistance, silicon carbide, strain engineering, wafer bonding",

author = "Phan, {Hoang Phuong} and Nguyen, {Tuan Khoa} and Toan Dinh and Cheng, {Han Hao} and Fengwen Mu and Alan Iacopi and Leonie Hold and Dao, {Dzung Viet} and Tadatomo Suga and Senesky, {Debbie G.} and Nguyen, {Nam Trung}",

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AU - Phan, Hoang Phuong

AU - Nguyen, Tuan Khoa

AU - Dinh, Toan

AU - Cheng, Han Hao

AU - Mu, Fengwen

AU - Iacopi, Alan

AU - Hold, Leonie

AU - Dao, Dzung Viet

AU - Suga, Tadatomo

AU - Senesky, Debbie G.

AU - Nguyen, Nam Trung

PY - 2018/12/19

Y1 - 2018/12/19

N2 - This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C-SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.

AB - This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C-SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.

KW - MEMS

KW - piezoresistance

KW - silicon carbide

KW - strain engineering

KW - wafer bonding

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Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

Abstract

Keywords

ASJC Scopus subject areas

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