Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

Hoang Phuong Phan, Tuan Khoa Nguyen, Toan Dinh, Han Hao Cheng, Fengwen Mu, Alan Iacopi, Leonie Hold, Dzung Viet Dao, Tadatomo Suga, Debbie G. Senesky, Nam Trung Nguyen

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C-SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.

Original languageEnglish
Article number1800288
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume215
Issue number24
DOIs
Publication statusPublished - 2018 Dec 19
Externally publishedYes

Fingerprint

Gages
Glass
augmentation
glass
sensors
Sensors
Substrates
Conduction bands
Silicon carbide
silicon carbides
microelectromechanical systems
MEMS
linearity
valleys
elimination
electron transfer
conduction bands
Electric properties
electrical properties
Single crystals

Keywords

  • MEMS
  • piezoresistance
  • silicon carbide
  • strain engineering
  • wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement. / Phan, Hoang Phuong; Nguyen, Tuan Khoa; Dinh, Toan; Cheng, Han Hao; Mu, Fengwen; Iacopi, Alan; Hold, Leonie; Dao, Dzung Viet; Suga, Tadatomo; Senesky, Debbie G.; Nguyen, Nam Trung.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 215, No. 24, 1800288, 19.12.2018.

Research output: Contribution to journalArticle

Phan, HP, Nguyen, TK, Dinh, T, Cheng, HH, Mu, F, Iacopi, A, Hold, L, Dao, DV, Suga, T, Senesky, DG & Nguyen, NT 2018, 'Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement', Physica Status Solidi (A) Applications and Materials Science, vol. 215, no. 24, 1800288. https://doi.org/10.1002/pssa.201800288
Phan, Hoang Phuong ; Nguyen, Tuan Khoa ; Dinh, Toan ; Cheng, Han Hao ; Mu, Fengwen ; Iacopi, Alan ; Hold, Leonie ; Dao, Dzung Viet ; Suga, Tadatomo ; Senesky, Debbie G. ; Nguyen, Nam Trung. / Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement. In: Physica Status Solidi (A) Applications and Materials Science. 2018 ; Vol. 215, No. 24.
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AU - Hold, Leonie

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