Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

T. Nakaoka, Takaaki Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, Y. Arakawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The strong strain distribution induced in the bowed airbridge and the effect on the electronic states of the quantum dots (QD) were investigated. The strain distribution in and around the QD was calculated by the finite element method. The strain in the bowed airbridge to distribute from tensile to compressive along the growth direction was shown by the finite element calculation. The calculation demonstrated that the characteristic strain distribution around the dot embedded in the bowed airbridge modified not only the energy levels, but also the wave functions.

Original languageEnglish
Pages (from-to)6812-6817
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number10
DOIs
Publication statusPublished - 2003 Nov 15
Externally publishedYes

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strain distribution
quantum dots
electronics
finite element method
energy levels
wave functions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures. / Nakaoka, T.; Kakitsuka, Takaaki; Saito, T.; Kako, S.; Ishida, S.; Nishioka, M.; Yoshikuni, Y.; Arakawa, Y.

In: Journal of Applied Physics, Vol. 94, No. 10, 15.11.2003, p. 6812-6817.

Research output: Contribution to journalArticle

Nakaoka, T. ; Kakitsuka, Takaaki ; Saito, T. ; Kako, S. ; Ishida, S. ; Nishioka, M. ; Yoshikuni, Y. ; Arakawa, Y. / Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 10. pp. 6812-6817.
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