Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors

A. Seike, T. Tange, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

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Abstract

Transconductance (gm) enhancement in n -type and p -type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependent oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p -nwFETs and 3.0 in n -nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width at half maximum and a shift to lower wavenumber, confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

Original languageEnglish
Article number202117
JournalApplied Physics Letters
Volume91
Issue number20
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Seike, A., Tange, T., Sugiura, Y., Tsuchida, I., Ohta, H., Watanabe, T., Kosemura, D., Ogura, A., & Ohdomari, I. (2007). Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors. Applied Physics Letters, 91(20), [202117]. https://doi.org/10.1063/1.2812577