Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors

A. Seike, T. Tange, Y. Sugiura, I. Tsuchida, H. Ohta, Takanobu Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    Transconductance (gm) enhancement in n -type and p -type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependent oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p -nwFETs and 3.0 in n -nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width at half maximum and a shift to lower wavenumber, confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

    Original languageEnglish
    Article number202117
    JournalApplied Physics Letters
    Volume91
    Issue number20
    DOIs
    Publication statusPublished - 2007

    Fingerprint

    transconductance
    nanowires
    field effect transistors
    tensile stress
    oxidation
    augmentation
    silicon
    control equipment
    strain distribution
    display devices
    molecular dynamics
    shift
    simulation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors. / Seike, A.; Tange, T.; Sugiura, Y.; Tsuchida, I.; Ohta, H.; Watanabe, Takanobu; Kosemura, D.; Ogura, A.; Ohdomari, I.

    In: Applied Physics Letters, Vol. 91, No. 20, 202117, 2007.

    Research output: Contribution to journalArticle

    Seike, A, Tange, T, Sugiura, Y, Tsuchida, I, Ohta, H, Watanabe, T, Kosemura, D, Ogura, A & Ohdomari, I 2007, 'Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors', Applied Physics Letters, vol. 91, no. 20, 202117. https://doi.org/10.1063/1.2812577
    Seike, A. ; Tange, T. ; Sugiura, Y. ; Tsuchida, I. ; Ohta, H. ; Watanabe, Takanobu ; Kosemura, D. ; Ogura, A. ; Ohdomari, I. / Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors. In: Applied Physics Letters. 2007 ; Vol. 91, No. 20.
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    AU - Ohta, H.

    AU - Watanabe, Takanobu

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