Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates

Toshiki Makimoto, Yoshiharu Yamauchi, Jakatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Thick p-InGaN layers were grown on GaN by metalorganic vapor phase epitaxy to investigate the strain inside p-InGaN using a reciprocal space map of X-ray diffraction intensity, It was found that a large part of p-InGaN grows coherently on the GaN buffer layer, even though it is much thicker than the calculated critical thickness. This result means that few dislocations are generated at the InGaN/GaN interface. Using this strained thick p-InGaN as a base, a GaN/InGaN heterojunction bipolar transistor was fabricated on a sapphire substrate. Its maximum current gain was as high as 1000 and its offset voltage as low as 0.2V, which matches that calculated from the conduction-band discontinuity between the n-GaN emitter and the p-InGaN base.

Original languageEnglish
Pages (from-to)2722-2725
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Heterojunction bipolar transistors
Buffer layers
bipolar transistors
Conduction bands
Sapphire
heterojunctions
sapphire
X ray diffraction
Electric potential
Substrates
vapor phase epitaxy
discontinuity
conduction bands
emitters
buffers
electric potential
diffraction
x rays

Keywords

  • Current gain
  • GaN
  • GaN/InGaN
  • HBT
  • MOVPE
  • Offset voltage
  • P-InGaN
  • Sapphire substrate
  • Strain

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates. / Makimoto, Toshiki; Yamauchi, Yoshiharu; Kido, Jakatoshi; Kumakura, Kazuhide; Taniyasu, Yoshitaka; Kasu, Makoto; Matsumoto, Nobuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 04.2005, p. 2722-2725.

Research output: Contribution to journalArticle

Makimoto, Toshiki ; Yamauchi, Yoshiharu ; Kido, Jakatoshi ; Kumakura, Kazuhide ; Taniyasu, Yoshitaka ; Kasu, Makoto ; Matsumoto, Nobuo. / Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 4 B. pp. 2722-2725.
@article{4bad8d36dede415fa4d88ff59b64616d,
title = "Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates",
abstract = "Thick p-InGaN layers were grown on GaN by metalorganic vapor phase epitaxy to investigate the strain inside p-InGaN using a reciprocal space map of X-ray diffraction intensity, It was found that a large part of p-InGaN grows coherently on the GaN buffer layer, even though it is much thicker than the calculated critical thickness. This result means that few dislocations are generated at the InGaN/GaN interface. Using this strained thick p-InGaN as a base, a GaN/InGaN heterojunction bipolar transistor was fabricated on a sapphire substrate. Its maximum current gain was as high as 1000 and its offset voltage as low as 0.2V, which matches that calculated from the conduction-band discontinuity between the n-GaN emitter and the p-InGaN base.",
keywords = "Current gain, GaN, GaN/InGaN, HBT, MOVPE, Offset voltage, P-InGaN, Sapphire substrate, Strain",
author = "Toshiki Makimoto and Yoshiharu Yamauchi and Jakatoshi Kido and Kazuhide Kumakura and Yoshitaka Taniyasu and Makoto Kasu and Nobuo Matsumoto",
year = "2005",
month = "4",
doi = "10.1143/JJAP.44.2722",
language = "English",
volume = "44",
pages = "2722--2725",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates

AU - Makimoto, Toshiki

AU - Yamauchi, Yoshiharu

AU - Kido, Jakatoshi

AU - Kumakura, Kazuhide

AU - Taniyasu, Yoshitaka

AU - Kasu, Makoto

AU - Matsumoto, Nobuo

PY - 2005/4

Y1 - 2005/4

N2 - Thick p-InGaN layers were grown on GaN by metalorganic vapor phase epitaxy to investigate the strain inside p-InGaN using a reciprocal space map of X-ray diffraction intensity, It was found that a large part of p-InGaN grows coherently on the GaN buffer layer, even though it is much thicker than the calculated critical thickness. This result means that few dislocations are generated at the InGaN/GaN interface. Using this strained thick p-InGaN as a base, a GaN/InGaN heterojunction bipolar transistor was fabricated on a sapphire substrate. Its maximum current gain was as high as 1000 and its offset voltage as low as 0.2V, which matches that calculated from the conduction-band discontinuity between the n-GaN emitter and the p-InGaN base.

AB - Thick p-InGaN layers were grown on GaN by metalorganic vapor phase epitaxy to investigate the strain inside p-InGaN using a reciprocal space map of X-ray diffraction intensity, It was found that a large part of p-InGaN grows coherently on the GaN buffer layer, even though it is much thicker than the calculated critical thickness. This result means that few dislocations are generated at the InGaN/GaN interface. Using this strained thick p-InGaN as a base, a GaN/InGaN heterojunction bipolar transistor was fabricated on a sapphire substrate. Its maximum current gain was as high as 1000 and its offset voltage as low as 0.2V, which matches that calculated from the conduction-band discontinuity between the n-GaN emitter and the p-InGaN base.

KW - Current gain

KW - GaN

KW - GaN/InGaN

KW - HBT

KW - MOVPE

KW - Offset voltage

KW - P-InGaN

KW - Sapphire substrate

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=21244498953&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244498953&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.2722

DO - 10.1143/JJAP.44.2722

M3 - Article

VL - 44

SP - 2722

EP - 2725

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -