Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates

Toshiki Makimoto, Yoshiharu Yamauchi, Jakatoshi Kido, Kazuhide Kumakura, Yoshitaka Taniyasu, Makoto Kasu, Nobuo Matsumoto

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy