Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-auger electron spectroscopy

Suguru Noda, Takeshi Tsumura, Jota Fukuhara, Takashi Yoda, Hiroshi Komiyama, Yukihiro Shimogaki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Chemical vapor deposition (CVD) of tungsten is an important process to make interconnections in advanced integrated-circuit devices. As device dimensions continue to decrease, incomplete nucleation inside the trenches and via holes is becoming a crucial issue. In this work, micro-Auger electron spectroscopy with in-plane spatial resolution was applied for the first time to study the nucleation and growth process of W islands. Results showed that W grew slowly and uniformly on TiN surfaces up to about one-monolayer coverage, and then W islands nucleated and started to grow rapidly. This transition from layer to island shows that W grew by Stranski-Krastanov mode during CVD on TiN from WF6 and SiH4. Drastic difference might exist in chemical reactivity between the initial W layer on TiN surfaces and the W islands, causing the change in W growth rate.

Original languageEnglish
Pages (from-to)6974-6977
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number10
DOIs
Publication statusPublished - 2004 Oct 1
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Micro-auger electron spectroscopy
  • Nucleation and growth
  • Stranski-Krastanov growth
  • Titanium nitride
  • Tungsten

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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