Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces

Ryoma Hayakawa, XueNa Zhang, Helmut Dosch, Nobuya Hiroshiba, Toyohiro Chikyow, Yutaka Wakayama

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane and out-of-plane X-ray diffraction (XRD). Quaterrylene thin films on the SiO2 surface exhibit the Stranski-Krastanov (SK) growth mode; the films initially formed two-dimensional (2D) layers (<4 monolayers (ML)) followed by three-dimensional (3D) island growth. Grazing incidence X-ray diffraction (GIXD) measurement revealed that the first few layers were subjected to compressive stress along the b axis of the unit cell, resulting in expansion of the a- and c-lattice constants. This result revealed that compressive stress generated in the 2D layers drives the change of the growth mode to 3D. An understanding of the transition mechanism in early growth has important implications for the improvement of carrier transport in organic field-effect transistors.

Original languageEnglish
Pages (from-to)2197-2199
Number of pages3
JournalJournal of Physical Chemistry C
Volume113
Issue number6
DOIs
Publication statusPublished - 2009 Feb 12
Externally publishedYes

Fingerprint

Thin films
thin films
Compressive stress
Organic field effect transistors
X ray diffraction
Carrier transport
grazing incidence
diffraction
Lattice constants
Monolayers
Atomic force microscopy
x rays
field effect transistors
atomic force microscopy
expansion
cells

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Hayakawa, R., Zhang, X., Dosch, H., Hiroshiba, N., Chikyow, T., & Wakayama, Y. (2009). Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces. Journal of Physical Chemistry C, 113(6), 2197-2199. https://doi.org/10.1021/jp809556p

Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces. / Hayakawa, Ryoma; Zhang, XueNa; Dosch, Helmut; Hiroshiba, Nobuya; Chikyow, Toyohiro; Wakayama, Yutaka.

In: Journal of Physical Chemistry C, Vol. 113, No. 6, 12.02.2009, p. 2197-2199.

Research output: Contribution to journalArticle

Hayakawa, R, Zhang, X, Dosch, H, Hiroshiba, N, Chikyow, T & Wakayama, Y 2009, 'Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces', Journal of Physical Chemistry C, vol. 113, no. 6, pp. 2197-2199. https://doi.org/10.1021/jp809556p
Hayakawa R, Zhang X, Dosch H, Hiroshiba N, Chikyow T, Wakayama Y. Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces. Journal of Physical Chemistry C. 2009 Feb 12;113(6):2197-2199. https://doi.org/10.1021/jp809556p
Hayakawa, Ryoma ; Zhang, XueNa ; Dosch, Helmut ; Hiroshiba, Nobuya ; Chikyow, Toyohiro ; Wakayama, Yutaka. / Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces. In: Journal of Physical Chemistry C. 2009 ; Vol. 113, No. 6. pp. 2197-2199.
@article{ebd135a531364890902f2ab6eab14d78,
title = "Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces",
abstract = "The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane and out-of-plane X-ray diffraction (XRD). Quaterrylene thin films on the SiO2 surface exhibit the Stranski-Krastanov (SK) growth mode; the films initially formed two-dimensional (2D) layers (<4 monolayers (ML)) followed by three-dimensional (3D) island growth. Grazing incidence X-ray diffraction (GIXD) measurement revealed that the first few layers were subjected to compressive stress along the b axis of the unit cell, resulting in expansion of the a- and c-lattice constants. This result revealed that compressive stress generated in the 2D layers drives the change of the growth mode to 3D. An understanding of the transition mechanism in early growth has important implications for the improvement of carrier transport in organic field-effect transistors.",
author = "Ryoma Hayakawa and XueNa Zhang and Helmut Dosch and Nobuya Hiroshiba and Toyohiro Chikyow and Yutaka Wakayama",
year = "2009",
month = "2",
day = "12",
doi = "10.1021/jp809556p",
language = "English",
volume = "113",
pages = "2197--2199",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces

AU - Hayakawa, Ryoma

AU - Zhang, XueNa

AU - Dosch, Helmut

AU - Hiroshiba, Nobuya

AU - Chikyow, Toyohiro

AU - Wakayama, Yutaka

PY - 2009/2/12

Y1 - 2009/2/12

N2 - The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane and out-of-plane X-ray diffraction (XRD). Quaterrylene thin films on the SiO2 surface exhibit the Stranski-Krastanov (SK) growth mode; the films initially formed two-dimensional (2D) layers (<4 monolayers (ML)) followed by three-dimensional (3D) island growth. Grazing incidence X-ray diffraction (GIXD) measurement revealed that the first few layers were subjected to compressive stress along the b axis of the unit cell, resulting in expansion of the a- and c-lattice constants. This result revealed that compressive stress generated in the 2D layers drives the change of the growth mode to 3D. An understanding of the transition mechanism in early growth has important implications for the improvement of carrier transport in organic field-effect transistors.

AB - The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane and out-of-plane X-ray diffraction (XRD). Quaterrylene thin films on the SiO2 surface exhibit the Stranski-Krastanov (SK) growth mode; the films initially formed two-dimensional (2D) layers (<4 monolayers (ML)) followed by three-dimensional (3D) island growth. Grazing incidence X-ray diffraction (GIXD) measurement revealed that the first few layers were subjected to compressive stress along the b axis of the unit cell, resulting in expansion of the a- and c-lattice constants. This result revealed that compressive stress generated in the 2D layers drives the change of the growth mode to 3D. An understanding of the transition mechanism in early growth has important implications for the improvement of carrier transport in organic field-effect transistors.

UR - http://www.scopus.com/inward/record.url?scp=65249131837&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65249131837&partnerID=8YFLogxK

U2 - 10.1021/jp809556p

DO - 10.1021/jp809556p

M3 - Article

AN - SCOPUS:65249131837

VL - 113

SP - 2197

EP - 2199

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 6

ER -