Stripe order in highly doped La2-xSrxNiO4

R. Kajimoto, T. Kakeshita, H. Yoshizawa, T. Tanabe, Takuro Katsufuji, Y. Tokura

Research output: Contribution to journalArticle

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Abstract

Stripe order in La2-xSrxNiO4 with 0.289 ≲ × ≲ 1/2 was studied with the neutron-diffraction technique. The stripe order of holes and spins was observed at low temperatures in all samples. The incommensurability ε of the stripe order is approximately linear with the hole concentration nh up to x = 1/2. We found that the stripe is most stable at nh = 1/3 with ε = 1/3 from the analyses of the onset temperatures of the charge and spin orderings and the nh dependence of the correlation length of the stripe order. The stability of an ε = 1/3 stripe induces a systematic deviation of ε from the ε = nh law for samples with nh ≠ 1/3. This deviation affects the stripe order on both sides of the hole concentration with nh < 1/3 as well as nh > 1/3.

Original languageEnglish
JournalApplied Physics A: Materials Science and Processing
Volume74
Issue numberSUPPL.II
DOIs
Publication statusPublished - 2002 Dec
Externally publishedYes

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Hole concentration
Neutron diffraction
deviation
Temperature
neutron diffraction
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Stripe order in highly doped La2-xSrxNiO4 . / Kajimoto, R.; Kakeshita, T.; Yoshizawa, H.; Tanabe, T.; Katsufuji, Takuro; Tokura, Y.

In: Applied Physics A: Materials Science and Processing, Vol. 74, No. SUPPL.II, 12.2002.

Research output: Contribution to journalArticle

Kajimoto, R, Kakeshita, T, Yoshizawa, H, Tanabe, T, Katsufuji, T & Tokura, Y 2002, 'Stripe order in highly doped La2-xSrxNiO4 ', Applied Physics A: Materials Science and Processing, vol. 74, no. SUPPL.II. https://doi.org/10.1007/s003390201845
Kajimoto, R. ; Kakeshita, T. ; Yoshizawa, H. ; Tanabe, T. ; Katsufuji, Takuro ; Tokura, Y. / Stripe order in highly doped La2-xSrxNiO4 In: Applied Physics A: Materials Science and Processing. 2002 ; Vol. 74, No. SUPPL.II.
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