Structural analysis and transistor properties of hetero-molecular bilayers

Nobuya Hiroshiba, Ryoma Hayakawa, Matthieu Petit, Toyohiro Chikyow, Kiyoto Matsuishi, Yutaka Wakayama

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N'-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C8) and quaterrylene. First, the structure and carrier conduction of PTCDI-C8 films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C8/quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.

Original languageEnglish
Pages (from-to)441-443
Number of pages3
JournalThin Solid Films
Volume518
Issue number2
DOIs
Publication statusPublished - 2009 Nov 30
Externally publishedYes

Keywords

  • Displacement current measurement
  • Hetero-interface
  • Organic Field Effect transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Hiroshiba, N., Hayakawa, R., Petit, M., Chikyow, T., Matsuishi, K., & Wakayama, Y. (2009). Structural analysis and transistor properties of hetero-molecular bilayers. Thin Solid Films, 518(2), 441-443. https://doi.org/10.1016/j.tsf.2009.07.050