Abstract
We have fabricated nanometer-size pyramids (nanopyramids) on blunt W tips to apply for bright field emitter. The blunt tips were preliminarily given remolding treatment in order to sharpen their ends. The nanopyramids were grown on the tip end by being covered with thin layers of Pd and subsequently annealed at 1000 K. The structures of the specimen were analyzed by using filed ion microscopy (FIM). As a result, we have clarified detailed information about the atomic structures, of which the acquisition was not allowed in case that only FEM was employed. As far as the remolded W tips were concerned, the tip-end dimension of about 3 nm was narrowest possible for all the combinations of the remolding temperature and electric field. On the other hand, the grown nanopyramid with {211} sides and monoatomic-chain ridges exhibited even narrower summit. These findings are consistent with the contrasting behaviors of current stability data previously clarified by the FEM study.
Original language | English |
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Title of host publication | Proceedings - IVNC 2011: 2011 24th International Vacuum Nanoelectronics Conference |
Pages | 51-52 |
Number of pages | 2 |
Publication status | Published - 2011 |
Event | 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 - Wuppertal Duration: 2011 Jul 18 → 2011 Jul 22 |
Other
Other | 2011 24th International Vacuum Nanoelectronics Conference, IVNC 2011 |
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City | Wuppertal |
Period | 11/7/18 → 11/7/22 |
Keywords
- FIM
- Remolding treatment
- Single-atom emitter
ASJC Scopus subject areas
- Electrical and Electronic Engineering