Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3

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    Abstract

    AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.

    Original languageEnglish
    Article number1600284
    JournalPhysica Status Solidi (A) Applications and Materials Science
    Volume214
    Issue number1
    DOIs
    Publication statusPublished - 2017 Jan 1

    Fingerprint

    Buffer layers
    Structural properties
    Electric properties
    Sublimation
    Powders
    Conversion efficiency
    Heterojunctions
    Etching
    Solar cells
    Deposits
    Substrates
    Chemical analysis
    buffers
    sublimation
    heterojunctions
    crystallinity
    solar cells
    deposits
    etching

    Keywords

    • AgGaTe
    • chalcopyrites
    • closed space
    • solar cells
    • sublimation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Materials Chemistry
    • Electrical and Electronic Engineering

    Cite this

    @article{c208de785c5942a4a79a086f3b1e5a3f,
    title = "Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3",
    abstract = "AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15{\%}.",
    keywords = "AgGaTe, chalcopyrites, closed space, solar cells, sublimation",
    author = "Aya Uruno and Masakazu Kobayashi",
    year = "2017",
    month = "1",
    day = "1",
    doi = "10.1002/pssa.201600284",
    language = "English",
    volume = "214",
    journal = "Physica Status Solidi (A) Applications and Materials Science",
    issn = "1862-6300",
    publisher = "Wiley-VCH Verlag",
    number = "1",

    }

    TY - JOUR

    T1 - Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3

    AU - Uruno, Aya

    AU - Kobayashi, Masakazu

    PY - 2017/1/1

    Y1 - 2017/1/1

    N2 - AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.

    AB - AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.

    KW - AgGaTe

    KW - chalcopyrites

    KW - closed space

    KW - solar cells

    KW - sublimation

    UR - http://www.scopus.com/inward/record.url?scp=84991011114&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84991011114&partnerID=8YFLogxK

    U2 - 10.1002/pssa.201600284

    DO - 10.1002/pssa.201600284

    M3 - Article

    VL - 214

    JO - Physica Status Solidi (A) Applications and Materials Science

    JF - Physica Status Solidi (A) Applications and Materials Science

    SN - 1862-6300

    IS - 1

    M1 - 1600284

    ER -