Structural and electrical properties of beryllium implanted silicon carbide

T. Henkel, Y. Tanaka, Naoto Kobayashi, H. Tangue, M. Gong, X. D. Chen, S. Fung, C. D. Beling

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages117-122
Number of pages6
Volume572
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 8

Other

OtherProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'
CitySan Francisco, CA, USA
Period99/4/599/4/8

Fingerprint

Beryllium
Silicon carbide
Structural properties
Electric properties
Deep level transient spectroscopy
Rutherford backscattering spectroscopy
Secondary ion mass spectrometry
Annealing
Crystalline materials
silicon carbide
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Henkel, T., Tanaka, Y., Kobayashi, N., Tangue, H., Gong, M., Chen, X. D., ... Beling, C. D. (1999). Structural and electrical properties of beryllium implanted silicon carbide. In Materials Research Society Symposium - Proceedings (Vol. 572, pp. 117-122). Materials Research Society.

Structural and electrical properties of beryllium implanted silicon carbide. / Henkel, T.; Tanaka, Y.; Kobayashi, Naoto; Tangue, H.; Gong, M.; Chen, X. D.; Fung, S.; Beling, C. D.

Materials Research Society Symposium - Proceedings. Vol. 572 Materials Research Society, 1999. p. 117-122.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Henkel, T, Tanaka, Y, Kobayashi, N, Tangue, H, Gong, M, Chen, XD, Fung, S & Beling, CD 1999, Structural and electrical properties of beryllium implanted silicon carbide. in Materials Research Society Symposium - Proceedings. vol. 572, Materials Research Society, pp. 117-122, Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications', San Francisco, CA, USA, 99/4/5.
Henkel T, Tanaka Y, Kobayashi N, Tangue H, Gong M, Chen XD et al. Structural and electrical properties of beryllium implanted silicon carbide. In Materials Research Society Symposium - Proceedings. Vol. 572. Materials Research Society. 1999. p. 117-122
Henkel, T. ; Tanaka, Y. ; Kobayashi, Naoto ; Tangue, H. ; Gong, M. ; Chen, X. D. ; Fung, S. ; Beling, C. D. / Structural and electrical properties of beryllium implanted silicon carbide. Materials Research Society Symposium - Proceedings. Vol. 572 Materials Research Society, 1999. pp. 117-122
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