Abstract
Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.
| Original language | English |
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| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 117-122 |
| Number of pages | 6 |
| Volume | 572 |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA Duration: 1999 Apr 5 → 1999 Apr 8 |
Other
| Other | Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' |
|---|---|
| City | San Francisco, CA, USA |
| Period | 99/4/5 → 99/4/8 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials