Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering

Tetsuya Miyawaki; Nozomi Sugimoto; Naoto Fukatani; Tatsuhiko Yoshihara; Kenji Ueda; Nobuo Tanaka; Hidefumi Asano

doi:10.1063/1.3675986

Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering

Tetsuya Miyawaki^*, Nozomi Sugimoto, Naoto Fukatani, Tatsuhiko Yoshihara, Kenji Ueda, Nobuo Tanaka, Hidefumi Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Half-Heusler La-Pt-Bi thin films have been deposited on YAlO ₃(001) substrate by 3-source magnetron co-sputtering. Control of the Bi content was the critical factor to obtain single phase, c-axis-oriented thin films. Generation of secondary phases was effectively prevented by precise control of the deposition rate for separate targets as well as adjustment of the deposition temperature. The realization of single-phase LaPtBi thin films will provide new potential applications to topological insulating devices based on Heusler alloys.

Original language	English
Article number	07E327
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3675986
Publication status	Published - 2012 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering",

abstract = "Half-Heusler La-Pt-Bi thin films have been deposited on YAlO 3(001) substrate by 3-source magnetron co-sputtering. Control of the Bi content was the critical factor to obtain single phase, c-axis-oriented thin films. Generation of secondary phases was effectively prevented by precise control of the deposition rate for separate targets as well as adjustment of the deposition temperature. The realization of single-phase LaPtBi thin films will provide new potential applications to topological insulating devices based on Heusler alloys.",

author = "Tetsuya Miyawaki and Nozomi Sugimoto and Naoto Fukatani and Tatsuhiko Yoshihara and Kenji Ueda and Nobuo Tanaka and Hidefumi Asano",

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AU - Miyawaki, Tetsuya

AU - Sugimoto, Nozomi

AU - Fukatani, Naoto

AU - Yoshihara, Tatsuhiko

AU - Ueda, Kenji

AU - Tanaka, Nobuo

AU - Asano, Hidefumi

N1 - Funding Information: This work was partly supported by Grants-in-Aid for Science Research (Nos. 20360005, 21221005, and 23656214) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

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AB - Half-Heusler La-Pt-Bi thin films have been deposited on YAlO 3(001) substrate by 3-source magnetron co-sputtering. Control of the Bi content was the critical factor to obtain single phase, c-axis-oriented thin films. Generation of secondary phases was effectively prevented by precise control of the deposition rate for separate targets as well as adjustment of the deposition temperature. The realization of single-phase LaPtBi thin films will provide new potential applications to topological insulating devices based on Heusler alloys.

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Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering

Abstract

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