Structural and magnetic properties of antiferromagnetic Heusler Ru2MnGe Epitaxial thin films

Naoto Fukatani*, Hirohito Fujita, Tetsuya Miyawaki, Kenji Ueda, Hidefumi Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Structural and magnetic properties were investigated for Heusler-type alloy Ru2MnGe thin films. Ru2MnGe films on MgO substrate were subjected to an in-plane compressive strain, and exhibited enhanced antiferromagnetic (AFM) transition temperature (T N) up to 353 K, which exceeds by 37 K from the cubic bulk material (T N = 316 K). We also observed the exchange coupling between Ru2MnGe and Heusler-type ferromagnetic (FM) half-metal Fe2CrSi thin films. The present AFM Heusler alloy with relatively high T N is useful to fabricate high-quality all Heusler-type half-metal AFM/FM junctions and is a promising material for the emerging field of AFM spintronics.

Original languageEnglish
Pages (from-to)711-715
Number of pages5
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 2013 Aug
Externally publishedYes


  • Epitaxial strain
  • Exchange bias
  • Heusler alloys
  • Néel temperature
  • RuMnGe

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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