Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis

Naoto Kobayashi, H. Katsumata, H. L. Shen, M. Hasegawa, Y. Makita, H. Shibata, S. Kimura, A. Obara, S. Uekusa, T. Hatano

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Structural and optical properties have been investigated for surface β-FeSi2 layers on Si(100) and Si(111) formed by ion beam synthesis using 56Fe ion implantations with three different energies (140-50 keV) and subsequent two-step annealing at 600 °C and up to 915 °C. Rutherford backscattering spectrometry analyses have revealed Fe redistribution in the samples after the annealing procedure, which resulting in a Fe-deficient composition in the formed layers. X-ray diffraction experiments confirmed the existence of /gb-FeSi2 by annealing up to 915 °C, whereas the phase transformation from the β to α phase has been induced at 930 °C. In photoluminescence measurements at 2 K, both β-FeSi2 Si(100) and β-FeSi2 Si(111) samples, after annealing at 900-915 °C for 2 h, have shown two dominant emissions peaked around 0.836 eV and 0.80 eV, which nearly coincided with previously reported PL emissions from the sample prepared by electron beam deposition. Another β-FeSi2 Si(100) sample has shown sharp emissions peaked at 0.873 eV and 0.807 eV. Optical absorption measurements at room temperature have revealed the allowed direct bandgap of 0.868-0.885 eV as well as an absorption coefficient of the order of 104 cm-1 near the absorption edge for all samples.

Original languageEnglish
Pages (from-to)406-410
Number of pages5
JournalThin Solid Films
Volume270
Issue number1-2
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

Fingerprint

Ion beams
ion beams
Annealing
synthesis
annealing
Rutherford backscattering spectroscopy
Ion implantation
Light absorption
Spectrometry
Structural properties
Electron beams
Photoluminescence
Energy gap
Optical properties
Phase transitions
phase transformations
ion implantation
backscattering
surface layers
absorptivity

Keywords

  • Iron
  • Optical properties
  • Silicon
  • Structural properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Kobayashi, N., Katsumata, H., Shen, H. L., Hasegawa, M., Makita, Y., Shibata, H., ... Hatano, T. (1995). Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis. Thin Solid Films, 270(1-2), 406-410. https://doi.org/10.1016/0040-6090(95)06723-X

Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis. / Kobayashi, Naoto; Katsumata, H.; Shen, H. L.; Hasegawa, M.; Makita, Y.; Shibata, H.; Kimura, S.; Obara, A.; Uekusa, S.; Hatano, T.

In: Thin Solid Films, Vol. 270, No. 1-2, 01.12.1995, p. 406-410.

Research output: Contribution to journalArticle

Kobayashi, N, Katsumata, H, Shen, HL, Hasegawa, M, Makita, Y, Shibata, H, Kimura, S, Obara, A, Uekusa, S & Hatano, T 1995, 'Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis', Thin Solid Films, vol. 270, no. 1-2, pp. 406-410. https://doi.org/10.1016/0040-6090(95)06723-X
Kobayashi, Naoto ; Katsumata, H. ; Shen, H. L. ; Hasegawa, M. ; Makita, Y. ; Shibata, H. ; Kimura, S. ; Obara, A. ; Uekusa, S. ; Hatano, T. / Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis. In: Thin Solid Films. 1995 ; Vol. 270, No. 1-2. pp. 406-410.
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