Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates

D. J. Olego, Y. Okuno, Toshihiro Kawano, M. Tamura

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Abstract

Heteroepitaxial layers of InP with thickness D ranging from 0.1 to 6.0 μm were grown by low-pressure metalorganic chemical vapor deposition on (001) surfaces of GaAs substrates. Their dislocation structure, induced strains, and nature of the radiative recombinations were investigated as a function of D with transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy. For D7 cm-2 range when D surpasses 4.0 μm. Concomitant with the improved crystalline quality, the following observations are made. Firstly, the full width at half maximum of the x-ray rocking curves diminishes from values larger than 500 arcsec for D

Original languageEnglish
Pages (from-to)4492-4501
Number of pages10
JournalJournal of Applied Physics
Volume71
Issue number9
DOIs
Publication statusPublished - 1992
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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