Structural Change in Ag2Te Buffer Layer During Two-Step Closed Space Sublimation of AgGaTe2

Y. Yu*, M. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

An AgGaTe2 layer was prepared using an Ag2Te buffer layer. Ag2Te layers were deposited by the radio-frequency sputtering method. We investigate the variations in the Ag2Te buffer layer surface morphology and composition that take place during annealing. Ag2Te films were annealed in a tube furnace. The composition and surface morphology of the Ag2Te layer were found to vary depending on the thermal annealing temperature and duration. It was confirmed that a dewetting process in the Ag2Te layer occurred with annealing between 200°C and 500°C, and O2 and Mo reacted at 600°C and then became MoO3 compounds. Mo and Te were completely desorbed from the surface at 700°C. This confirmed that the surface morphology of the Ag2Te layer was controlled by the annealing temperature and duration.

Original languageEnglish
Pages (from-to)7541-7546
Number of pages6
JournalJournal of Electronic Materials
Volume49
Issue number12
DOIs
Publication statusPublished - 2020 Dec

Keywords

  • AgTe
  • annealing
  • dewetting process
  • solar cell
  • surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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