Abstract
An AgGaTe2 layer was prepared using an Ag2Te buffer layer. Ag2Te layers were deposited by the radio-frequency sputtering method. We investigate the variations in the Ag2Te buffer layer surface morphology and composition that take place during annealing. Ag2Te films were annealed in a tube furnace. The composition and surface morphology of the Ag2Te layer were found to vary depending on the thermal annealing temperature and duration. It was confirmed that a dewetting process in the Ag2Te layer occurred with annealing between 200°C and 500°C, and O2 and Mo reacted at 600°C and then became MoO3 compounds. Mo and Te were completely desorbed from the surface at 700°C. This confirmed that the surface morphology of the Ag2Te layer was controlled by the annealing temperature and duration.
Original language | English |
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Pages (from-to) | 7541-7546 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 49 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2020 Dec |
Keywords
- AgTe
- annealing
- dewetting process
- solar cell
- surface morphology
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry