Structural change induced in LaAlO3 by ion implantation

Masayuki Harima, Yosuke Horii, Takaaki Morimoto, Yoshimichi Ohki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.

Original languageEnglish
Title of host publicationProceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
PublisherInstitute of Electrical Engineers of Japan
Pages180-183
Number of pages4
ISBN (Print)9784886860866
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 - Niigata, Japan
Duration: 2014 Jun 12014 Jun 5

Publication series

NameProceedings of the International Symposium on Electrical Insulating Materials

Other

Other2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
CountryJapan
CityNiigata
Period14/6/114/6/5

Keywords

  • Impurity
  • Ion implantation
  • Photoluminescence
  • X-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Harima, M., Horii, Y., Morimoto, T., & Ohki, Y. (2014). Structural change induced in LaAlO3 by ion implantation. In Proceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 (pp. 180-183). [6870748] (Proceedings of the International Symposium on Electrical Insulating Materials). Institute of Electrical Engineers of Japan. https://doi.org/10.1109/ISEIM.2014.6870748