Structural change induced in LaAlO3 by ion implantation

Masayuki Harima, Yosuke Horii, Takaaki Morimoto, Yoshimichi Ohki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.

    Original languageEnglish
    Title of host publicationProceedings of the International Symposium on Electrical Insulating Materials
    PublisherInstitute of Electrical Engineers of Japan
    Pages180-183
    Number of pages4
    ISBN (Print)9784886860866
    DOIs
    Publication statusPublished - 2014
    Event2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 - Niigata
    Duration: 2014 Jun 12014 Jun 5

    Other

    Other2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
    CityNiigata
    Period14/6/114/6/5

    Fingerprint

    Ion implantation
    Photoluminescence
    Crystalline materials
    Oxygen vacancies
    Semiconductor devices
    Field effect transistors
    Light absorption
    Perovskite
    Energy gap
    Single crystals
    Ions
    X ray diffraction

    Keywords

    • Impurity
    • Ion implantation
    • Photoluminescence
    • X-ray diffraction

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Harima, M., Horii, Y., Morimoto, T., & Ohki, Y. (2014). Structural change induced in LaAlO3 by ion implantation. In Proceedings of the International Symposium on Electrical Insulating Materials (pp. 180-183). [6870748] Institute of Electrical Engineers of Japan. https://doi.org/10.1109/ISEIM.2014.6870748

    Structural change induced in LaAlO3 by ion implantation. / Harima, Masayuki; Horii, Yosuke; Morimoto, Takaaki; Ohki, Yoshimichi.

    Proceedings of the International Symposium on Electrical Insulating Materials. Institute of Electrical Engineers of Japan, 2014. p. 180-183 6870748.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Harima, M, Horii, Y, Morimoto, T & Ohki, Y 2014, Structural change induced in LaAlO3 by ion implantation. in Proceedings of the International Symposium on Electrical Insulating Materials., 6870748, Institute of Electrical Engineers of Japan, pp. 180-183, 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014, Niigata, 14/6/1. https://doi.org/10.1109/ISEIM.2014.6870748
    Harima M, Horii Y, Morimoto T, Ohki Y. Structural change induced in LaAlO3 by ion implantation. In Proceedings of the International Symposium on Electrical Insulating Materials. Institute of Electrical Engineers of Japan. 2014. p. 180-183. 6870748 https://doi.org/10.1109/ISEIM.2014.6870748
    Harima, Masayuki ; Horii, Yosuke ; Morimoto, Takaaki ; Ohki, Yoshimichi. / Structural change induced in LaAlO3 by ion implantation. Proceedings of the International Symposium on Electrical Insulating Materials. Institute of Electrical Engineers of Japan, 2014. pp. 180-183
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