Structural change induced in LaAlO3 by ion implantation

Masayuki Harima, Takaaki Morimoto, Yoshimichi Ohki*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, the effects of implantation of P+ or B+ ions on the structural change of single-crystal LaAlO3 were examined. The optical absorption edge located at ∼5.6 eV, which seems to correspond to the bandgap energy of LaAlO3, is hardly affected by the ion implantation. The X-ray diffraction peak intensity at 2θχ=23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at ∼2.8 eV due to the oxygen vacancy, which is detectable in both amorphous and crystalline samples, hardly changes after the ion implantation. These results indicate that the ion implantation degrades the crystallinity of LaAlO3.

Original languageEnglish
Pages (from-to)5-9
Number of pages5
JournalIEEJ Transactions on Electrical and Electronic Engineering
Volume11
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1

Keywords

  • Defect
  • Impurity
  • Ion implantation
  • LaAlO
  • Oxygen vacancy
  • Photoluminescence
  • X-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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