Structural change induced in LaAlO3 by ion implantation

Masayuki Harima, Takaaki Morimoto, Yoshimichi Ohki

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, the effects of implantation of P+ or B+ ions on the structural change of single-crystal LaAlO3 were examined. The optical absorption edge located at ∼5.6 eV, which seems to correspond to the bandgap energy of LaAlO3, is hardly affected by the ion implantation. The X-ray diffraction peak intensity at 2θχ=23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at ∼2.8 eV due to the oxygen vacancy, which is detectable in both amorphous and crystalline samples, hardly changes after the ion implantation. These results indicate that the ion implantation degrades the crystallinity of LaAlO3.

    Original languageEnglish
    Pages (from-to)5-9
    Number of pages5
    JournalIEEJ Transactions on Electrical and Electronic Engineering
    Issue number1
    Publication statusPublished - 2016 Jan 1


    • Defect
    • Impurity
    • Ion implantation
    • LaAlO
    • Oxygen vacancy
    • Photoluminescence
    • X-ray diffraction

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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