Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons

S. Shimoto; M. Fujimaki; N. Miyazaki; Y. Nishihara; Y. Ohki; K. Imamura; K. Terasawa

Structural changes in Ge-doped SiO₂ planar waveguides induced by ultraviolet photons

S. Shimoto^*, M. Fujimaki, N. Miyazaki, Y. Nishihara, Y. Ohki, K. Imamura, K. Terasawa

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO₂ waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

Original language	English
Pages	47-50
Number of pages	4
Publication status	Published - 1998 Dec 1
Event	Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn Duration: 1998 Sept 27 → 1998 Sept 30

Other

Other	Proceedings of the 1998 International Symposium on Electrical Insulating Materials
City	Toyohashi, Jpn
Period	98/9/27 → 98/9/30

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

Cite this

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title = "Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons",

abstract = "The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.",

author = "S. Shimoto and M. Fujimaki and N. Miyazaki and Y. Nishihara and Y. Ohki and K. Imamura and K. Terasawa",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "47--50",

note = "Proceedings of the 1998 International Symposium on Electrical Insulating Materials ; Conference date: 27-09-1998 Through 30-09-1998",

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TY - CONF

T1 - Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons

AU - Shimoto, S.

AU - Fujimaki, M.

AU - Miyazaki, N.

AU - Nishihara, Y.

AU - Ohki, Y.

AU - Imamura, K.

AU - Terasawa, K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

AB - The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

UR - http://www.scopus.com/inward/record.url?scp=0032311902&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032311902&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032311902

SP - 47

EP - 50

T2 - Proceedings of the 1998 International Symposium on Electrical Insulating Materials

Y2 - 27 September 1998 through 30 September 1998

ER -

Structural changes in Ge-doped SiO₂ planar waveguides induced by ultraviolet photons

Abstract

Other

ASJC Scopus subject areas

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