Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons

S. Shimoto, M. Fujimaki, N. Miyazaki, Y. Nishihara, Y. Ohki, K. Imamura, K. Terasawa

Research output: Contribution to conferencePaper

Abstract

The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

Original languageEnglish
Pages47-50
Number of pages4
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Duration: 1998 Sep 271998 Sep 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

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ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Shimoto, S., Fujimaki, M., Miyazaki, N., Nishihara, Y., Ohki, Y., Imamura, K., & Terasawa, K. (1998). Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons. 47-50. Paper presented at Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, .