Structural changes induced by KrF excimer laser photons in H2-Ioaded Ge-doped SiO2 glass

Makoto Fujimaki, Toshiaki Kasahara, Shigeyuki Shimoto, Nahoko Miyazaki, Shin Ichiro Tokuhiro, Kwang Soo Seol, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    57 Citations (Scopus)

    Abstract

    Photochemical reactions related to the Ge lone-pair center (GLPC) that are induced by KrF excimer laser photons in H2-loaded Ge-doped SiO2 glass have been investigated. Without the H2 loading, the Ge electron center (GEC) and the positively charged GLPC were induced by the laser irradiation. In the H2-loaded sample, the GEC, the Ge E′ center, and the germyl radical (GR) were induced by the irradiation, while the positively chafed GLPC was not observed after the irradiation. If the H2-loaded sample was thermally annealed after the photon irradiation, the concentration of the photo-induced GEC decreased monotonically with an increase in the annealing temperature. On the other hand, the concentration of the GR increased up to the annealing temperature of 160°C, and it decreased at higher temperatures. Without the pre-irradiation, the induction of the GR was not observed even in the H2-loaded sample. From these results, it is concluded that the positively charged GLPC is terminated with a hydrogen atom in the H2-loaded sample and then becomes the GR by trapping an electron thermally released from the GEC.

    Original languageEnglish
    Pages (from-to)4682-4687
    Number of pages6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume60
    Issue number7
    Publication statusPublished - 1999

    Fingerprint

    Excimer lasers
    excimer lasers
    Photons
    Glass
    Electrons
    Irradiation
    glass
    photons
    irradiation
    Annealing
    Photochemical reactions
    electrons
    Laser beam effects
    Temperature
    Hydrogen
    annealing
    Atoms
    photochemical reactions
    hydrogen atoms
    induction

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Fujimaki, M., Kasahara, T., Shimoto, S., Miyazaki, N., Tokuhiro, S. I., Seol, K. S., & Ohki, Y. (1999). Structural changes induced by KrF excimer laser photons in H2-Ioaded Ge-doped SiO2 glass. Physical Review B - Condensed Matter and Materials Physics, 60(7), 4682-4687.

    Structural changes induced by KrF excimer laser photons in H2-Ioaded Ge-doped SiO2 glass. / Fujimaki, Makoto; Kasahara, Toshiaki; Shimoto, Shigeyuki; Miyazaki, Nahoko; Tokuhiro, Shin Ichiro; Seol, Kwang Soo; Ohki, Yoshimichi.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 7, 1999, p. 4682-4687.

    Research output: Contribution to journalArticle

    Fujimaki, M, Kasahara, T, Shimoto, S, Miyazaki, N, Tokuhiro, SI, Seol, KS & Ohki, Y 1999, 'Structural changes induced by KrF excimer laser photons in H2-Ioaded Ge-doped SiO2 glass', Physical Review B - Condensed Matter and Materials Physics, vol. 60, no. 7, pp. 4682-4687.
    Fujimaki M, Kasahara T, Shimoto S, Miyazaki N, Tokuhiro SI, Seol KS et al. Structural changes induced by KrF excimer laser photons in H2-Ioaded Ge-doped SiO2 glass. Physical Review B - Condensed Matter and Materials Physics. 1999;60(7):4682-4687.
    Fujimaki, Makoto ; Kasahara, Toshiaki ; Shimoto, Shigeyuki ; Miyazaki, Nahoko ; Tokuhiro, Shin Ichiro ; Seol, Kwang Soo ; Ohki, Yoshimichi. / Structural changes induced by KrF excimer laser photons in H2-Ioaded Ge-doped SiO2 glass. In: Physical Review B - Condensed Matter and Materials Physics. 1999 ; Vol. 60, No. 7. pp. 4682-4687.
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    abstract = "Photochemical reactions related to the Ge lone-pair center (GLPC) that are induced by KrF excimer laser photons in H2-loaded Ge-doped SiO2 glass have been investigated. Without the H2 loading, the Ge electron center (GEC) and the positively charged GLPC were induced by the laser irradiation. In the H2-loaded sample, the GEC, the Ge E′ center, and the germyl radical (GR) were induced by the irradiation, while the positively chafed GLPC was not observed after the irradiation. If the H2-loaded sample was thermally annealed after the photon irradiation, the concentration of the photo-induced GEC decreased monotonically with an increase in the annealing temperature. On the other hand, the concentration of the GR increased up to the annealing temperature of 160°C, and it decreased at higher temperatures. Without the pre-irradiation, the induction of the GR was not observed even in the H2-loaded sample. From these results, it is concluded that the positively charged GLPC is terminated with a hydrogen atom in the H2-loaded sample and then becomes the GR by trapping an electron thermally released from the GEC.",
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    AU - Tokuhiro, Shin Ichiro

    AU - Seol, Kwang Soo

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    AB - Photochemical reactions related to the Ge lone-pair center (GLPC) that are induced by KrF excimer laser photons in H2-loaded Ge-doped SiO2 glass have been investigated. Without the H2 loading, the Ge electron center (GEC) and the positively charged GLPC were induced by the laser irradiation. In the H2-loaded sample, the GEC, the Ge E′ center, and the germyl radical (GR) were induced by the irradiation, while the positively chafed GLPC was not observed after the irradiation. If the H2-loaded sample was thermally annealed after the photon irradiation, the concentration of the photo-induced GEC decreased monotonically with an increase in the annealing temperature. On the other hand, the concentration of the GR increased up to the annealing temperature of 160°C, and it decreased at higher temperatures. Without the pre-irradiation, the induction of the GR was not observed even in the H2-loaded sample. From these results, it is concluded that the positively charged GLPC is terminated with a hydrogen atom in the H2-loaded sample and then becomes the GR by trapping an electron thermally released from the GEC.

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