Structural characterization of AgGaTe₂ layers grown on a- and c-sapphire substrates by a closed space sublimation method

AgGaTe₂ layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe₂ layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag₅Te₃ was formed along with the AgGaTe₂ when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe₂ without Ag₅Te₃ layers could be grown on a-plane sapphire. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)