Structural characterization of AgGaTe2 layers grown on a- and c-sapphire substrates by a closed space sublimation method

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

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    Abstract

    AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag5Te3 was formed along with the AgGaTe2 when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe2 without Ag5Te3 layers could be grown on a-plane sapphire. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    Original languageEnglish
    Pages (from-to)1186-1189
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume11
    Issue number7-8
    DOIs
    Publication statusPublished - 2014

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    Keywords

    • Chalcopyrite
    • Closed space sublimation
    • Pole figure
    • Sapphire

    ASJC Scopus subject areas

    • Condensed Matter Physics

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