Structural characterization of amorphous Ta2 O5 and SiO2-Ta2 O5 used as solid electrolyte for nonvolatile switches

Naoki Banno; Toshitsugu Sakamoto; Noriyuki Iguchi; Masashi Matsumoto; Hideto Imai; Toshinari Ichihashi; Shinji Fujieda; Kazuhiko Tanaka; Satoshi Watanabe; Shu Yamaguchi; Tsuyoshi Hasegawa; Masakazu Aono

doi:10.1063/1.3488830

Structural characterization of amorphous Ta₂ O₅ and SiO₂-Ta₂ O₅ used as solid electrolyte for nonvolatile switches

Naoki Banno^*, Toshitsugu Sakamoto, Noriyuki Iguchi, Masashi Matsumoto, Hideto Imai, Toshinari Ichihashi, Shinji Fujieda, Kazuhiko Tanaka, Satoshi Watanabe, Shu Yamaguchi, Tsuyoshi Hasegawa, Masakazu Aono

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Diffusivity of Cu in amorphous (a-) Ta₂ O₅ is increased by low temperature annealing above 350 °C but the increase is suppressed by adding SiO₂ to Ta₂ O₅. To clarify the reasons, we investigated the structural difference between a-Ta₂ O₅ and a-SiO₂-Ta₂ O₅. The results show that the low temperature annealing does not cause polycrystallization of Ta₂ O₅ but purges weakly bonded oxygen atoms from the bulk and decreases the film density. Adding SiO₂ to Ta₂ O ₅ is shown to increase the coordination number of Ta-O, which results in the improved thermal stability.

Original language	English
Article number	113507
Journal	Applied Physics Letters
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.3488830
Publication status	Published - 2010 Sept 13
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{54f5388054d446fb8f7ad1252081baab,

title = "Structural characterization of amorphous Ta2 O5 and SiO2-Ta2 O5 used as solid electrolyte for nonvolatile switches",

abstract = "Diffusivity of Cu in amorphous (a-) Ta2 O5 is increased by low temperature annealing above 350 °C but the increase is suppressed by adding SiO2 to Ta2 O5. To clarify the reasons, we investigated the structural difference between a-Ta2 O5 and a-SiO2-Ta2 O5. The results show that the low temperature annealing does not cause polycrystallization of Ta2 O5 but purges weakly bonded oxygen atoms from the bulk and decreases the film density. Adding SiO2 to Ta2 O 5 is shown to increase the coordination number of Ta-O, which results in the improved thermal stability.",

author = "Naoki Banno and Toshitsugu Sakamoto and Noriyuki Iguchi and Masashi Matsumoto and Hideto Imai and Toshinari Ichihashi and Shinji Fujieda and Kazuhiko Tanaka and Satoshi Watanabe and Shu Yamaguchi and Tsuyoshi Hasegawa and Masakazu Aono",

note = "Funding Information: The present work was conducted as part of the Key-Technology Research Project “Atomic Switch Programmed Device” and was supported by Japan{\textquoteright}s Ministry of Education, Culture, Sports, Science, and Technology. The x-ray absorption spectroscopy measurements were carried out with the approval of Japan Synchrotron Research Institute (JASRI) (Proposal Nos. 2008B5931 and 2009B1826).",

year = "2010",

month = sep,

day = "13",

doi = "10.1063/1.3488830",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Structural characterization of amorphous Ta2 O5 and SiO2-Ta2 O5 used as solid electrolyte for nonvolatile switches

AU - Banno, Naoki

AU - Sakamoto, Toshitsugu

AU - Iguchi, Noriyuki

AU - Matsumoto, Masashi

AU - Imai, Hideto

AU - Ichihashi, Toshinari

AU - Fujieda, Shinji

AU - Tanaka, Kazuhiko

AU - Watanabe, Satoshi

AU - Yamaguchi, Shu

AU - Hasegawa, Tsuyoshi

AU - Aono, Masakazu

N1 - Funding Information: The present work was conducted as part of the Key-Technology Research Project “Atomic Switch Programmed Device” and was supported by Japan’s Ministry of Education, Culture, Sports, Science, and Technology. The x-ray absorption spectroscopy measurements were carried out with the approval of Japan Synchrotron Research Institute (JASRI) (Proposal Nos. 2008B5931 and 2009B1826).

PY - 2010/9/13

Y1 - 2010/9/13

N2 - Diffusivity of Cu in amorphous (a-) Ta2 O5 is increased by low temperature annealing above 350 °C but the increase is suppressed by adding SiO2 to Ta2 O5. To clarify the reasons, we investigated the structural difference between a-Ta2 O5 and a-SiO2-Ta2 O5. The results show that the low temperature annealing does not cause polycrystallization of Ta2 O5 but purges weakly bonded oxygen atoms from the bulk and decreases the film density. Adding SiO2 to Ta2 O 5 is shown to increase the coordination number of Ta-O, which results in the improved thermal stability.

AB - Diffusivity of Cu in amorphous (a-) Ta2 O5 is increased by low temperature annealing above 350 °C but the increase is suppressed by adding SiO2 to Ta2 O5. To clarify the reasons, we investigated the structural difference between a-Ta2 O5 and a-SiO2-Ta2 O5. The results show that the low temperature annealing does not cause polycrystallization of Ta2 O5 but purges weakly bonded oxygen atoms from the bulk and decreases the film density. Adding SiO2 to Ta2 O 5 is shown to increase the coordination number of Ta-O, which results in the improved thermal stability.

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Structural characterization of amorphous Ta₂ O₅ and SiO₂-Ta₂ O₅ used as solid electrolyte for nonvolatile switches

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