Structural characterization of amorphous Ta2 O5 and SiO2-Ta2 O5 used as solid electrolyte for nonvolatile switches

Naoki Banno, Toshitsugu Sakamoto, Noriyuki Iguchi, Masashi Matsumoto, Hideto Imai, Toshinari Ichihashi, Shinji Fujieda, Kazuhiko Tanaka, Satoshi Watanabe, Shu Yamaguchi, Tsuyoshi Hasegawa, Masakazu Aono

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13 Citations (Scopus)


Diffusivity of Cu in amorphous (a-) Ta2 O5 is increased by low temperature annealing above 350 °C but the increase is suppressed by adding SiO2 to Ta2 O5. To clarify the reasons, we investigated the structural difference between a-Ta2 O5 and a-SiO2-Ta2 O5. The results show that the low temperature annealing does not cause polycrystallization of Ta2 O5 but purges weakly bonded oxygen atoms from the bulk and decreases the film density. Adding SiO2 to Ta2 O 5 is shown to increase the coordination number of Ta-O, which results in the improved thermal stability.

Original languageEnglish
Article number113507
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2010 Sep 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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