Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

T. Henkel, G. Ferro, S. Nishizawa, H. Pressler, Y. Tanaka, H. Tanoue, Naoto Kobayashi

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • Materials Science(all)

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