Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

T. Henkel, G. Ferro, S. Nishizawa, H. Pressler, Y. Tanaka, H. Tanoue, Naoto Kobayashi

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

Fingerprint

Wet etching
Silicon carbide
Ion implantation
Etching
Rutherford backscattering spectroscopy
Deterioration
Raman spectroscopy
Structural properties
Atomic force microscopy
Surface roughness
Fabrication
Crystals
silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Henkel, T., Ferro, G., Nishizawa, S., Pressler, H., Tanaka, Y., Tanoue, H., & Kobayashi, N. (2000). Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.

Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching. / Henkel, T.; Ferro, G.; Nishizawa, S.; Pressler, H.; Tanaka, Y.; Tanoue, H.; Kobayashi, Naoto.

Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.

Research output: Chapter in Book/Report/Conference proceedingChapter

Henkel, T, Ferro, G, Nishizawa, S, Pressler, H, Tanaka, Y, Tanoue, H & Kobayashi, N 2000, Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching. in Materials Science Forum. vol. 338, Trans Tech Publ Ltd, ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, 99/10/10.
Henkel T, Ferro G, Nishizawa S, Pressler H, Tanaka Y, Tanoue H et al. Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching. In Materials Science Forum. Vol. 338. Trans Tech Publ Ltd. 2000
Henkel, T. ; Ferro, G. ; Nishizawa, S. ; Pressler, H. ; Tanaka, Y. ; Tanoue, H. ; Kobayashi, Naoto. / Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching. Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.
@inbook{e8918bb47004440b8f843a5a7b918f60,
title = "Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching",
abstract = "Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.",
author = "T. Henkel and G. Ferro and S. Nishizawa and H. Pressler and Y. Tanaka and H. Tanoue and Naoto Kobayashi",
year = "2000",
language = "English",
volume = "338",
booktitle = "Materials Science Forum",
publisher = "Trans Tech Publ Ltd",

}

TY - CHAP

T1 - Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

AU - Henkel, T.

AU - Ferro, G.

AU - Nishizawa, S.

AU - Pressler, H.

AU - Tanaka, Y.

AU - Tanoue, H.

AU - Kobayashi, Naoto

PY - 2000

Y1 - 2000

N2 - Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.

AB - Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.

UR - http://www.scopus.com/inward/record.url?scp=0033687497&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033687497&partnerID=8YFLogxK

M3 - Chapter

VL - 338

BT - Materials Science Forum

PB - Trans Tech Publ Ltd

ER -