Structural characterizations of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by transmission electron microscopy

T. M. Nakatani, Y. K. Takahashi, T. Ishikawa, M. Yamamoto, K. Hono

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We have investigated the structure of Co2MnSi/MgO/Co2MnSi magnetic tunneling junctions with different tunnel magnetoresistance values depending on the in situ annealing temperatures just after the deposition of the upper Co2MnSi electrodes. The nano-beam diffraction patterns indicated that the degree of order of the upper Co2MnSi electrode annealed at 550 °C was higher than that of an electrode annealed at 400 °C. Moreover, the degree of the L21 order of the upper Co2MnSi electrode annealed at 550 °C was even lower than that of the lower Co2MnSi electrode annealed at an almost equal temperature of 600 °C. Atomic-scale observation using a high-angle annular dark-field (HAADF) method distinctly showed the existence of the L21-ordered regions in the B2-ordered matrix in the upper Co2MnSi electrode annealed at 400 °C.

Original languageEnglish
Pages (from-to)357-361
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume322
Issue number3
DOIs
Publication statusPublished - 2010 Feb
Externally publishedYes

Keywords

  • CoMnSi
  • HAADF-STEM
  • Magnetic tunnel junction
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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