Structural defects in amorphous silicon oxynitride and silicon nitride

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Amorphous silicon oxynitride and silicon nitride have been gaining each important position as a material used in electronic and optoelectronic devices. The present paper gives a review of structural defects in these materials, focusing on their characterization by photoluminescence and electron spin resonance. Some typical effects induced in these materials by the presence of hydrogen, the irradiation of ultraviolet photons and application of a high electric field are also discussed.

    Original languageEnglish
    Pages (from-to)39-49
    Number of pages11
    JournalDefect and Diffusion Forum
    Volume218-220
    Publication statusPublished - 2003

    Fingerprint

    oxynitrides
    optoelectronic devices
    Amorphous silicon
    Silicon nitride
    silicon nitrides
    amorphous silicon
    nitrides
    electron paramagnetic resonance
    photoluminescence
    Defects
    irradiation
    electric fields
    defects
    photons
    hydrogen
    electronics
    Optoelectronic devices
    Paramagnetic resonance
    Hydrogen
    Photoluminescence

    Keywords

    • Amorphous Materials
    • Band-Tail States
    • Paramagnetic Defects
    • Photoluminescence
    • Poole-Frenkel Conduction
    • Static Disorder

    ASJC Scopus subject areas

    • Metals and Alloys

    Cite this

    Structural defects in amorphous silicon oxynitride and silicon nitride. / Kato, H.; Ohki, Yoshimichi.

    In: Defect and Diffusion Forum, Vol. 218-220, 2003, p. 39-49.

    Research output: Contribution to journalArticle

    @article{e9f83739d781406ba1f400447aa4aedd,
    title = "Structural defects in amorphous silicon oxynitride and silicon nitride",
    abstract = "Amorphous silicon oxynitride and silicon nitride have been gaining each important position as a material used in electronic and optoelectronic devices. The present paper gives a review of structural defects in these materials, focusing on their characterization by photoluminescence and electron spin resonance. Some typical effects induced in these materials by the presence of hydrogen, the irradiation of ultraviolet photons and application of a high electric field are also discussed.",
    keywords = "Amorphous Materials, Band-Tail States, Paramagnetic Defects, Photoluminescence, Poole-Frenkel Conduction, Static Disorder",
    author = "H. Kato and Yoshimichi Ohki",
    year = "2003",
    language = "English",
    volume = "218-220",
    pages = "39--49",
    journal = "Diffusion and Defect Data. Pt A Defect and Diffusion Forum",
    issn = "1012-0386",
    publisher = "Trans Tech Publications",

    }

    TY - JOUR

    T1 - Structural defects in amorphous silicon oxynitride and silicon nitride

    AU - Kato, H.

    AU - Ohki, Yoshimichi

    PY - 2003

    Y1 - 2003

    N2 - Amorphous silicon oxynitride and silicon nitride have been gaining each important position as a material used in electronic and optoelectronic devices. The present paper gives a review of structural defects in these materials, focusing on their characterization by photoluminescence and electron spin resonance. Some typical effects induced in these materials by the presence of hydrogen, the irradiation of ultraviolet photons and application of a high electric field are also discussed.

    AB - Amorphous silicon oxynitride and silicon nitride have been gaining each important position as a material used in electronic and optoelectronic devices. The present paper gives a review of structural defects in these materials, focusing on their characterization by photoluminescence and electron spin resonance. Some typical effects induced in these materials by the presence of hydrogen, the irradiation of ultraviolet photons and application of a high electric field are also discussed.

    KW - Amorphous Materials

    KW - Band-Tail States

    KW - Paramagnetic Defects

    KW - Photoluminescence

    KW - Poole-Frenkel Conduction

    KW - Static Disorder

    UR - http://www.scopus.com/inward/record.url?scp=0041841550&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0041841550&partnerID=8YFLogxK

    M3 - Article

    VL - 218-220

    SP - 39

    EP - 49

    JO - Diffusion and Defect Data. Pt A Defect and Diffusion Forum

    JF - Diffusion and Defect Data. Pt A Defect and Diffusion Forum

    SN - 1012-0386

    ER -