Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE

Y. Taniyasu, Y. Watanabe, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, Masakazu Kobayashi, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Cubic InGaN/GaN heterostructures were grown on GaAs(001) substrates by MOVPE. X-ray reciprocal space mapping (RSM) measurements were used to investigate the structural defects. It was revealed that the cubic InGaN layers contained high density stacking faults parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN 〈111〉 directions. The hexagonal domains were preferentially oriented to the cubic InGaN 〈111〉A directions rather than the 〈111〉B directions. It was clarified that the cubic InGaN layer was anisotropically strained, and this would be originated from the anisotropic mixing of the hexagonal phase in the cubic InGaN epilayers.

Original languageEnglish
Pages (from-to)397-400
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
Publication statusPublished - 1999 Nov
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Epilayers
Stacking faults
Heterojunctions
X rays
Defects
defects
Substrates
crystal defects
Direction compound
gallium arsenide
x rays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE. / Taniyasu, Y.; Watanabe, Y.; Lim, D. H.; Jia, A. W.; Shimotomai, M.; Kato, Y.; Kobayashi, Masakazu; Yoshikawa, A.; Takahashi, K.

In: Physica Status Solidi (A) Applied Research, Vol. 176, No. 1, 11.1999, p. 397-400.

Research output: Contribution to journalArticle

Taniyasu, Y. ; Watanabe, Y. ; Lim, D. H. ; Jia, A. W. ; Shimotomai, M. ; Kato, Y. ; Kobayashi, Masakazu ; Yoshikawa, A. ; Takahashi, K. / Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE. In: Physica Status Solidi (A) Applied Research. 1999 ; Vol. 176, No. 1. pp. 397-400.
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AU - Lim, D. H.

AU - Jia, A. W.

AU - Shimotomai, M.

AU - Kato, Y.

AU - Kobayashi, Masakazu

AU - Yoshikawa, A.

AU - Takahashi, K.

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