Abstract
Cubic InGaN/GaN heterostructures were grown on GaAs(001) substrates by MOVPE. X-ray reciprocal space mapping (RSM) measurements were used to investigate the structural defects. It was revealed that the cubic InGaN layers contained high density stacking faults parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN 〈111〉 directions. The hexagonal domains were preferentially oriented to the cubic InGaN 〈111〉A directions rather than the 〈111〉B directions. It was clarified that the cubic InGaN layer was anisotropically strained, and this would be originated from the anisotropic mixing of the hexagonal phase in the cubic InGaN epilayers.
| Original language | English |
|---|---|
| Pages (from-to) | 397-400 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 176 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 Nov |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE. / Taniyasu, Y.; Watanabe, Y.; Lim, D. H.; Jia, A. W.; Shimotomai, M.; Kato, Y.; Kobayashi, Masakazu; Yoshikawa, A.; Takahashi, K.
In: Physica Status Solidi (A) Applied Research, Vol. 176, No. 1, 11.1999, p. 397-400.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE
AU - Taniyasu, Y.
AU - Watanabe, Y.
AU - Lim, D. H.
AU - Jia, A. W.
AU - Shimotomai, M.
AU - Kato, Y.
AU - Kobayashi, Masakazu
AU - Yoshikawa, A.
AU - Takahashi, K.
PY - 1999/11
Y1 - 1999/11
N2 - Cubic InGaN/GaN heterostructures were grown on GaAs(001) substrates by MOVPE. X-ray reciprocal space mapping (RSM) measurements were used to investigate the structural defects. It was revealed that the cubic InGaN layers contained high density stacking faults parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN 〈111〉 directions. The hexagonal domains were preferentially oriented to the cubic InGaN 〈111〉A directions rather than the 〈111〉B directions. It was clarified that the cubic InGaN layer was anisotropically strained, and this would be originated from the anisotropic mixing of the hexagonal phase in the cubic InGaN epilayers.
AB - Cubic InGaN/GaN heterostructures were grown on GaAs(001) substrates by MOVPE. X-ray reciprocal space mapping (RSM) measurements were used to investigate the structural defects. It was revealed that the cubic InGaN layers contained high density stacking faults parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN 〈111〉 directions. The hexagonal domains were preferentially oriented to the cubic InGaN 〈111〉A directions rather than the 〈111〉B directions. It was clarified that the cubic InGaN layer was anisotropically strained, and this would be originated from the anisotropic mixing of the hexagonal phase in the cubic InGaN epilayers.
UR - http://www.scopus.com/inward/record.url?scp=0033221489&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033221489&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-396X(199911)176:1<397::AID-PSSA397>3.0.CO;2-V
DO - 10.1002/(SICI)1521-396X(199911)176:1<397::AID-PSSA397>3.0.CO;2-V
M3 - Article
AN - SCOPUS:0033221489
VL - 176
SP - 397
EP - 400
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -