Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE

Y. Taniyasu*, Y. Watanabe, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Cubic InGaN/GaN heterostructures were grown on GaAs(001) substrates by MOVPE. X-ray reciprocal space mapping (RSM) measurements were used to investigate the structural defects. It was revealed that the cubic InGaN layers contained high density stacking faults parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN 〈111〉 directions. The hexagonal domains were preferentially oriented to the cubic InGaN 〈111〉A directions rather than the 〈111〉B directions. It was clarified that the cubic InGaN layer was anisotropically strained, and this would be originated from the anisotropic mixing of the hexagonal phase in the cubic InGaN epilayers.

Original languageEnglish
Pages (from-to)397-400
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Issue number1
Publication statusPublished - 1999 Nov
Externally publishedYes
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: 1999 Jul 41999 Jul 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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