Structural insight using anomalous XRD into Mn2CoAl Heusler alloy films grown by magnetron sputtering, IBAS, and MBE techniques

Hiroo Tajiri*, Loku Singgappulige Rosantha Kumara, Yuya Sakuraba, Zixi Chen, Jian Wang, Weinan Zhou, Kushwaha Varun, Kenji Ueda, Shinya Yamada, Kohei Hamaya, Kazuhiro Hono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Inverse Heusler alloy Mn2CoAl thin films, known as a spin-gapless semiconductor (SGS), grown by three different methods—ultra-high vacuum magnetron sputtering, Ar-ion beam assisted sputtering, and molecular beam epitaxy—are investigated by comparing their electric transport properties, microstructures and atomic-level structures. Of the samples, the Mn2CoAl thin film grown by molecular beam epitaxy consists of Mn- and Co-rich phases, the structures of which are determined to be the L21B-type and disordered L21-type, respectively, according to anomalous X-ray diffraction analysis. None of them forms the XA-type structure expected for SGS Heusler alloy, although they all exhibit SGS characteristics. To validate the SGS characteristics, it is necessary to extract not only the magnetic and electric transport properties but also information about microstructures and atomic-scale structures of the films including defects such as atomic swap.

Original languageEnglish
Article number118063
JournalActa Materialia
Volume235
DOIs
Publication statusPublished - 2022 Aug 15
Externally publishedYes

Keywords

  • Anomalous X-ray diffraction
  • Atomic-level structures
  • Element-specific analysis
  • Heusler alloys
  • Spin gapless semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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