Structural properties of sulfur-implanted diamond single crystals

Masataka Hasegawa, Masahiko Ogura, Daisuke Takeuchi, Sadanori Yamanaka, Hideyuki Watanabe, Sung Gi Ri, Naoto Kobayashi, Hideyo Okushi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The lattice location of sulfur implanted into diamond single crystals has been investigated using particle induced X-ray emission and ion channeling. Sulfur atoms were implanted into high-quality undoped homoepitaxial diamond (100) film grown by microwave plasma assisted chemical vapor deposition onto high-temperature and high-pressure synthetic lb diamond (100) substrates, as well as into lb diamond substrates directly, at 400°C up to the concentration of 1 × 1020/cm3. They were annealed at 800°C in vacuum for 100inin after the implantation. Sulfur dopant was found to occupy preferentially substitutional sites in the host lattice. The possible maximum displacement of sulfur dopant was 0.14A from 〈001〉 axis, and 0.07A from 〈011〉 axis. The substitutional fraction of sulfur was 0.5 and 0.7 along 〈001〉 and along 〈011〉 direction, respectively. The depth profile of sulfur distribution measured by SIMS coincides with that of simulated vacancy depth profile associated with the sulfur implantation, rather than expected dopant distribution. These results suggest the redistribution of sulfur, and possible sulfur-residual damage (vacancy) coupling in the diamond crystal after the implantation.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
Pages773-776
Number of pages4
DOIs
Publication statusPublished - 2000
Externally publishedYes
Event2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach
Duration: 2000 Sep 172000 Sep 22

Other

Other2000 13th International Conference on Ion Implantation Technology, IIT 2000
CityAlpbach
Period00/9/1700/9/22

Fingerprint

Diamond
Sulfur
Structural properties
Diamonds
sulfur
diamonds
Single crystals
single crystals
implantation
Doping (additives)
Ion implantation
Vacancies
Synthetic diamonds
Diamond films
Substrates
Secondary ion mass spectrometry
profiles
Crystal lattices
secondary ion mass spectrometry
Chemical vapor deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hasegawa, M., Ogura, M., Takeuchi, D., Yamanaka, S., Watanabe, H., Ri, S. G., ... Okushi, H. (2000). Structural properties of sulfur-implanted diamond single crystals. In Proceedings of the International Conference on Ion Implantation Technology (pp. 773-776). [924268] https://doi.org/10.1109/.2000.924268

Structural properties of sulfur-implanted diamond single crystals. / Hasegawa, Masataka; Ogura, Masahiko; Takeuchi, Daisuke; Yamanaka, Sadanori; Watanabe, Hideyuki; Ri, Sung Gi; Kobayashi, Naoto; Okushi, Hideyo.

Proceedings of the International Conference on Ion Implantation Technology. 2000. p. 773-776 924268.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hasegawa, M, Ogura, M, Takeuchi, D, Yamanaka, S, Watanabe, H, Ri, SG, Kobayashi, N & Okushi, H 2000, Structural properties of sulfur-implanted diamond single crystals. in Proceedings of the International Conference on Ion Implantation Technology., 924268, pp. 773-776, 2000 13th International Conference on Ion Implantation Technology, IIT 2000, Alpbach, 00/9/17. https://doi.org/10.1109/.2000.924268
Hasegawa M, Ogura M, Takeuchi D, Yamanaka S, Watanabe H, Ri SG et al. Structural properties of sulfur-implanted diamond single crystals. In Proceedings of the International Conference on Ion Implantation Technology. 2000. p. 773-776. 924268 https://doi.org/10.1109/.2000.924268
Hasegawa, Masataka ; Ogura, Masahiko ; Takeuchi, Daisuke ; Yamanaka, Sadanori ; Watanabe, Hideyuki ; Ri, Sung Gi ; Kobayashi, Naoto ; Okushi, Hideyo. / Structural properties of sulfur-implanted diamond single crystals. Proceedings of the International Conference on Ion Implantation Technology. 2000. pp. 773-776
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AU - Ri, Sung Gi

AU - Kobayashi, Naoto

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