Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films