Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane

Takashi Noma, Takaharu Sugiura, Keisuke Ishii, Yoshimichi Ohki, Yoshimasa Hama

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.

    Original languageEnglish
    Pages (from-to)937-943
    Number of pages7
    JournalJournal of Physics D: Applied Physics
    Volume30
    Issue number6
    DOIs
    Publication statusPublished - 1997 Mar 21

    Fingerprint

    oxygen plasma
    waterproofing
    Stabilization
    stabilization
    Oxygen
    Waterproofing
    Plasmas
    consolidation
    Polymers
    Plasma enhanced chemical vapor deposition
    Consolidation
    Permittivity
    Carbon
    vapor deposition
    Impurities
    permittivity
    impurities
    Water
    carbon
    shift

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane. / Noma, Takashi; Sugiura, Takaharu; Ishii, Keisuke; Ohki, Yoshimichi; Hama, Yoshimasa.

    In: Journal of Physics D: Applied Physics, Vol. 30, No. 6, 21.03.1997, p. 937-943.

    Research output: Contribution to journalArticle

    Noma, Takashi ; Sugiura, Takaharu ; Ishii, Keisuke ; Ohki, Yoshimichi ; Hama, Yoshimasa. / Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane. In: Journal of Physics D: Applied Physics. 1997 ; Vol. 30, No. 6. pp. 937-943.
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