Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane

Takashi Noma, Takaharu Sugiura, Keisuke Ishii, Yoshimichi Ohki, Yoshimasa Hama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.

Original languageEnglish
Pages (from-to)937-943
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume30
Issue number6
DOIs
Publication statusPublished - 1997 Mar 21

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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