Structural study of inhomogeneous charge distribution of inequivalent CuO2 planes in Bi2.1Sr1.9Ca2Cu 3O10+δ single crystals

Takao Watanabe; Takenori Fujii; Azusa Matsuda

doi:10.1143/JPSJ.72.2924

Structural study of inhomogeneous charge distribution of inequivalent CuO₂ planes in Bi_2.1Sr_1.9Ca₂Cu ₃O_10+δ single crystals

Takao Watanabe^*, Takenori Fujii, Azusa Matsuda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Four-circle x-ray diffraction measurements were carried out on a single crystal of Bi_2.1Sr_1.9-Ca₂Cu₃O _10+δ with doping levels from underdoped to overdoped. The excess charge of each inequivalent CuO₂ plane was estimated using the obtained inter-atomic distances in two ways by means of the bond-valence-sum method. The copper valence and the valence sum of the copper and the surrounding oxygen ions gave contradictory results for the inhomogeneous charge distribution of the inequivalent CuO₂ planes.

Original language	English
Pages (from-to)	2924-2929
Number of pages	6
Journal	journal of the physical society of japan
Volume	72
Issue number	11
DOIs	https://doi.org/10.1143/JPSJ.72.2924
Publication status	Published - 2003 Nov 1
Externally published	Yes

Keywords

BiSrCaCuO
Bond-valence-sum (BVS) method
Four-circle x-ray diffraction measurement
High-T cuprate
Out-of-plane resistivity
Single crystal

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1143/JPSJ.72.2924

Cite this

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title = "Structural study of inhomogeneous charge distribution of inequivalent CuO2 planes in Bi2.1Sr1.9Ca2Cu 3O10+δ single crystals",

abstract = "Four-circle x-ray diffraction measurements were carried out on a single crystal of Bi2.1Sr1.9-Ca2Cu3O 10+δ with doping levels from underdoped to overdoped. The excess charge of each inequivalent CuO2 plane was estimated using the obtained inter-atomic distances in two ways by means of the bond-valence-sum method. The copper valence and the valence sum of the copper and the surrounding oxygen ions gave contradictory results for the inhomogeneous charge distribution of the inequivalent CuO2 planes.",

keywords = "BiSrCaCuO, Bond-valence-sum (BVS) method, Four-circle x-ray diffraction measurement, High-T cuprate, Out-of-plane resistivity, Single crystal",

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T1 - Structural study of inhomogeneous charge distribution of inequivalent CuO2 planes in Bi2.1Sr1.9Ca2Cu 3O10+δ single crystals

AU - Watanabe, Takao

AU - Fujii, Takenori

AU - Matsuda, Azusa

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Four-circle x-ray diffraction measurements were carried out on a single crystal of Bi2.1Sr1.9-Ca2Cu3O 10+δ with doping levels from underdoped to overdoped. The excess charge of each inequivalent CuO2 plane was estimated using the obtained inter-atomic distances in two ways by means of the bond-valence-sum method. The copper valence and the valence sum of the copper and the surrounding oxygen ions gave contradictory results for the inhomogeneous charge distribution of the inequivalent CuO2 planes.

AB - Four-circle x-ray diffraction measurements were carried out on a single crystal of Bi2.1Sr1.9-Ca2Cu3O 10+δ with doping levels from underdoped to overdoped. The excess charge of each inequivalent CuO2 plane was estimated using the obtained inter-atomic distances in two ways by means of the bond-valence-sum method. The copper valence and the valence sum of the copper and the surrounding oxygen ions gave contradictory results for the inhomogeneous charge distribution of the inequivalent CuO2 planes.

KW - BiSrCaCuO

KW - Bond-valence-sum (BVS) method

KW - Four-circle x-ray diffraction measurement

KW - High-T cuprate

KW - Out-of-plane resistivity

KW - Single crystal

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