TY - JOUR
T1 - Structure and magnetic property of c -axis oriented L 10 -FePt nanoparticles on TiN/ a-Si underlayers
AU - Tsuji, Yoshiko
AU - Noda, Suguru
AU - Yamaguchi, Yukio
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - L 10 -FePt is a promising material for high-density perpendicular magnetic recording media. The authors previously reported that c -axis oriented L 10 -FePt nanoparticle monolayers can be formed on (200)-oriented polycrystalline template TiN underlayers on SiO2 by using a conventional sputtering method. In this study, TiN nanostructures, such as the degree of (200) orientation, were improved by first depositing a buffer layer, such as amorphous Si onto SiO2, and the grain size could be controlled by adjusting either the deposition temperature or TiN thickness. When FePt nanoparticles were formed on a template TiN underlayer with a buffer layer of amorphous Si, both their degree of c -axis orientation and their magnetic properties were improved; FePt nanoparticles with nominal thickness of 1.4 nm had coercivity of 12.9 kOe in the out-of-plane direction at 300 K.
AB - L 10 -FePt is a promising material for high-density perpendicular magnetic recording media. The authors previously reported that c -axis oriented L 10 -FePt nanoparticle monolayers can be formed on (200)-oriented polycrystalline template TiN underlayers on SiO2 by using a conventional sputtering method. In this study, TiN nanostructures, such as the degree of (200) orientation, were improved by first depositing a buffer layer, such as amorphous Si onto SiO2, and the grain size could be controlled by adjusting either the deposition temperature or TiN thickness. When FePt nanoparticles were formed on a template TiN underlayer with a buffer layer of amorphous Si, both their degree of c -axis orientation and their magnetic properties were improved; FePt nanoparticles with nominal thickness of 1.4 nm had coercivity of 12.9 kOe in the out-of-plane direction at 300 K.
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U2 - 10.1116/1.2803726
DO - 10.1116/1.2803726
M3 - Article
AN - SCOPUS:37149051836
SN - 1071-1023
VL - 25
SP - 1892
EP - 1895
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 6
ER -