Structure and magnetic property of c -axis oriented L 10 -FePt nanoparticles on TiN/ a-Si underlayers

Yoshiko Tsuji, Suguru Noda, Yukio Yamaguchi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

L 10 -FePt is a promising material for high-density perpendicular magnetic recording media. The authors previously reported that c -axis oriented L 10 -FePt nanoparticle monolayers can be formed on (200)-oriented polycrystalline template TiN underlayers on SiO2 by using a conventional sputtering method. In this study, TiN nanostructures, such as the degree of (200) orientation, were improved by first depositing a buffer layer, such as amorphous Si onto SiO2, and the grain size could be controlled by adjusting either the deposition temperature or TiN thickness. When FePt nanoparticles were formed on a template TiN underlayer with a buffer layer of amorphous Si, both their degree of c -axis orientation and their magnetic properties were improved; FePt nanoparticles with nominal thickness of 1.4 nm had coercivity of 12.9 kOe in the out-of-plane direction at 300 K.

Original languageEnglish
Pages (from-to)1892-1895
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

Magnetic properties
Buffer layers
Nanoparticles
magnetic properties
nanoparticles
templates
buffers
Magnetic recording
magnetic recording
Coercive force
coercivity
Sputtering
Monolayers
Nanostructures
grain size
sputtering
adjusting
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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AB - L 10 -FePt is a promising material for high-density perpendicular magnetic recording media. The authors previously reported that c -axis oriented L 10 -FePt nanoparticle monolayers can be formed on (200)-oriented polycrystalline template TiN underlayers on SiO2 by using a conventional sputtering method. In this study, TiN nanostructures, such as the degree of (200) orientation, were improved by first depositing a buffer layer, such as amorphous Si onto SiO2, and the grain size could be controlled by adjusting either the deposition temperature or TiN thickness. When FePt nanoparticles were formed on a template TiN underlayer with a buffer layer of amorphous Si, both their degree of c -axis orientation and their magnetic properties were improved; FePt nanoparticles with nominal thickness of 1.4 nm had coercivity of 12.9 kOe in the out-of-plane direction at 300 K.

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