Structure of the ZnSe/GaAs heteroepitaxial interface

D. Li, J. M. Gonsalves, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

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Abstract

Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number5
DOIs
Publication statusPublished - 1990 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Li, D., Gonsalves, J. M., Otsuka, N., Qiu, J., Kobayashi, M., & Gunshor, R. L. (1990). Structure of the ZnSe/GaAs heteroepitaxial interface. Applied Physics Letters, 57(5), 449-451. https://doi.org/10.1063/1.103662