Structure of the ZnSe/GaAs heteroepitaxial interface

D. Li*, J. M. Gonsalves, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

87 Citations (Scopus)


Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 1990 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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