Structure of the ZnSe/GaAs heteroepitaxial interface

D. Li, J. M. Gonsalves, N. Otsuka, J. Qiu, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number5
DOIs
Publication statusPublished - 1990
Externally publishedYes

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sublattices
molecular beam epitaxy
zinc
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Li, D., Gonsalves, J. M., Otsuka, N., Qiu, J., Kobayashi, M., & Gunshor, R. L. (1990). Structure of the ZnSe/GaAs heteroepitaxial interface. Applied Physics Letters, 57(5), 449-451. https://doi.org/10.1063/1.103662

Structure of the ZnSe/GaAs heteroepitaxial interface. / Li, D.; Gonsalves, J. M.; Otsuka, N.; Qiu, J.; Kobayashi, Masakazu; Gunshor, R. L.

In: Applied Physics Letters, Vol. 57, No. 5, 1990, p. 449-451.

Research output: Contribution to journalArticle

Li, D, Gonsalves, JM, Otsuka, N, Qiu, J, Kobayashi, M & Gunshor, RL 1990, 'Structure of the ZnSe/GaAs heteroepitaxial interface', Applied Physics Letters, vol. 57, no. 5, pp. 449-451. https://doi.org/10.1063/1.103662
Li, D. ; Gonsalves, J. M. ; Otsuka, N. ; Qiu, J. ; Kobayashi, Masakazu ; Gunshor, R. L. / Structure of the ZnSe/GaAs heteroepitaxial interface. In: Applied Physics Letters. 1990 ; Vol. 57, No. 5. pp. 449-451.
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