Structures and optical properties of defects correlated with photo-induced refractive index changes in Ge-doped SiO2 glass

Makoto Fujimaki, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Photosensitivity of Ge-doped SiO2 glass is closely related to defect formation with ultraviolet photon irradiation. In the present paper, optical properties of Ge oxygen deficient centers, which are involved in the defect formation, are reviewed. Furthermore, structures and generation mechanisms of the photo-induced defects are discussed.

    Original languageEnglish
    Pages (from-to)43-50
    Number of pages8
    JournalDiffusion and Defect Data. Pt A Defect and Diffusion Forum
    Volume177
    Publication statusPublished - 2000

    Fingerprint

    Refractive index
    Optical properties
    refractivity
    optical properties
    Glass
    Defects
    glass
    defects
    Photosensitivity
    photosensitivity
    Photons
    Irradiation
    Oxygen
    irradiation
    photons
    oxygen

    ASJC Scopus subject areas

    • Metals and Alloys

    Cite this

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    title = "Structures and optical properties of defects correlated with photo-induced refractive index changes in Ge-doped SiO2 glass",
    abstract = "Photosensitivity of Ge-doped SiO2 glass is closely related to defect formation with ultraviolet photon irradiation. In the present paper, optical properties of Ge oxygen deficient centers, which are involved in the defect formation, are reviewed. Furthermore, structures and generation mechanisms of the photo-induced defects are discussed.",
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    year = "2000",
    language = "English",
    volume = "177",
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    journal = "Diffusion and Defect Data. Pt A Defect and Diffusion Forum",
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    publisher = "Trans Tech Publications",

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    TY - JOUR

    T1 - Structures and optical properties of defects correlated with photo-induced refractive index changes in Ge-doped SiO2 glass

    AU - Fujimaki, Makoto

    AU - Ohki, Yoshimichi

    PY - 2000

    Y1 - 2000

    N2 - Photosensitivity of Ge-doped SiO2 glass is closely related to defect formation with ultraviolet photon irradiation. In the present paper, optical properties of Ge oxygen deficient centers, which are involved in the defect formation, are reviewed. Furthermore, structures and generation mechanisms of the photo-induced defects are discussed.

    AB - Photosensitivity of Ge-doped SiO2 glass is closely related to defect formation with ultraviolet photon irradiation. In the present paper, optical properties of Ge oxygen deficient centers, which are involved in the defect formation, are reviewed. Furthermore, structures and generation mechanisms of the photo-induced defects are discussed.

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    AN - SCOPUS:0033892308

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    SP - 43

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    JO - Diffusion and Defect Data. Pt A Defect and Diffusion Forum

    JF - Diffusion and Defect Data. Pt A Defect and Diffusion Forum

    SN - 1012-0386

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