Photosensitivity of Ge-doped SiO2 glass is closely related to defect formation with ultraviolet photon irradiation. In the present paper, optical properties of Ge oxygen deficient centers, which are involved in the defect formation, are reviewed. Furthermore, structures and generation mechanisms of the photo-induced defects are discussed.
|Number of pages||8|
|Journal||Diffusion and Defect Data. Pt A Defect and Diffusion Forum|
|Publication status||Published - 2000 Jan 1|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics