Structures and optical properties of defects correlated with photo-induced refractive index changes in Ge-doped SiO2 glass

Makoto Fujimaki, Yoshimichi Ohki

Research output: Contribution to journalArticle

2 Citations (Scopus)


Photosensitivity of Ge-doped SiO2 glass is closely related to defect formation with ultraviolet photon irradiation. In the present paper, optical properties of Ge oxygen deficient centers, which are involved in the defect formation, are reviewed. Furthermore, structures and generation mechanisms of the photo-induced defects are discussed.

Original languageEnglish
Pages (from-to)43-50
Number of pages8
JournalDiffusion and Defect Data. Pt A Defect and Diffusion Forum
Publication statusPublished - 2000 Jan 1


ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

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