Studies on SiO₂-SiO₂ bonding with hydrofluoric acid. Room temperature and low stress bonding technique for MEMS

Chemical Compounds

• Ambient Reaction Temperature 36%
• Pressure 30%
• Acid 22%
• Residual Stress 17%
• Strength 16%
• Silicon Oxide 16%
• Silicon Dioxide 16%
• Electron Probe Microanalysis 15%
• Radioisotope 14%
• Secondary Ion Mass Spectroscopy 14%
• Hydrogen Atom 11%
• Fluorine Atom 11%
• Transmission Electron Microscopy 8%
• Surface 4%

Physics & Astronomy

• hydrofluoric acid 81%
• room temperature 36%
• interlayers 27%
• electron probes 6%
• microanalysis 6%
• silicon oxides 6%
• packaging 6%
• secondary ion mass spectrometry 6%
• radioactive isotopes 6%
• fluorine 5%
• hydrogen atoms 5%
• residual stress 5%
• assembly 5%
• silicon dioxide 4%
• damage 4%
• transmission electron microscopy 3%
• atoms 3%

Engineering & Materials Science

• Hydrofluoric acid 100%
• Temperature 26%
• Secondary ion mass spectrometry 8%
• Silicon oxides 8%
• Fluorine 8%
• Electron probe microanalysis 8%
• Radioisotopes 7%
• Atoms 6%
• Silica 6%
• Transmission electron microscopy 6%
• Packaging 5%
• Residual stresses 5%
• Hydrogen 4%
• Substrates 4%
• Hot Temperature 2%