Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure

Yuuki Sato, Shin ichiro Gozu, Tomohiro Kita, Syoji Yamada

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

For realization of the spin-polarized field effect transistor (spin-FET), we investigated a gated modulation of spin-orbit interaction and a spin-injection from a ferromagnetic metal (FM) to a two-dimensional electron gas (2DEG). Prepared samples were an In0.75Ga0.25As/In0.75Al0.25As modulation-doped narrow-gap heterojunction grown by molecular beam epitaxy (MBE). For the determination of spin-orbit interaction parameter, α, we measured Shubnikov-de Haas (SdH) oscillations at 1.5 K. We confirmed a modulation of α when a gate voltage was applied. We also carried out spin-injection experiments using a multi-terminal geometry sample, which had two different widths Ni40Fe60 electrodes. We observed a spin-valve like effect in a source-drain resistance of ∼ 0.1% as well as a resistance hysteresis behavior of ∼ 12% in non-local geometry below 20 K. These results are the first step to realize an active spintronic device, such as spin-FET.

Original languageEnglish
Pages (from-to)399-402
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event14th International Conference on the - Prague, Czech Republic
Duration: 2001 Jul 302001 Aug 3

Fingerprint

Field effect transistors
Heterojunctions
Two dimensional electron gas
field effect transistors
Modulation
Orbits
Electron tubes
Magnetoelectronics
spin-orbit interactions
Ferromagnetic materials
modulation
Geometry
Molecular beam epitaxy
Hysteresis
injection
geometry
Electrodes
Electric potential
electron gas
heterojunctions

Keywords

  • Narrow gap semiconductor
  • Spin-orbit interaction
  • Spin-polarized electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure. / Sato, Yuuki; Gozu, Shin ichiro; Kita, Tomohiro; Yamada, Syoji.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 12, No. 1-4, 01.01.2002, p. 399-402.

Research output: Contribution to journalConference article

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abstract = "For realization of the spin-polarized field effect transistor (spin-FET), we investigated a gated modulation of spin-orbit interaction and a spin-injection from a ferromagnetic metal (FM) to a two-dimensional electron gas (2DEG). Prepared samples were an In0.75Ga0.25As/In0.75Al0.25As modulation-doped narrow-gap heterojunction grown by molecular beam epitaxy (MBE). For the determination of spin-orbit interaction parameter, α, we measured Shubnikov-de Haas (SdH) oscillations at 1.5 K. We confirmed a modulation of α when a gate voltage was applied. We also carried out spin-injection experiments using a multi-terminal geometry sample, which had two different widths Ni40Fe60 electrodes. We observed a spin-valve like effect in a source-drain resistance of ∼ 0.1{\%} as well as a resistance hysteresis behavior of ∼ 12{\%} in non-local geometry below 20 K. These results are the first step to realize an active spintronic device, such as spin-FET.",
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AU - Sato, Yuuki

AU - Gozu, Shin ichiro

AU - Kita, Tomohiro

AU - Yamada, Syoji

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N2 - For realization of the spin-polarized field effect transistor (spin-FET), we investigated a gated modulation of spin-orbit interaction and a spin-injection from a ferromagnetic metal (FM) to a two-dimensional electron gas (2DEG). Prepared samples were an In0.75Ga0.25As/In0.75Al0.25As modulation-doped narrow-gap heterojunction grown by molecular beam epitaxy (MBE). For the determination of spin-orbit interaction parameter, α, we measured Shubnikov-de Haas (SdH) oscillations at 1.5 K. We confirmed a modulation of α when a gate voltage was applied. We also carried out spin-injection experiments using a multi-terminal geometry sample, which had two different widths Ni40Fe60 electrodes. We observed a spin-valve like effect in a source-drain resistance of ∼ 0.1% as well as a resistance hysteresis behavior of ∼ 12% in non-local geometry below 20 K. These results are the first step to realize an active spintronic device, such as spin-FET.

AB - For realization of the spin-polarized field effect transistor (spin-FET), we investigated a gated modulation of spin-orbit interaction and a spin-injection from a ferromagnetic metal (FM) to a two-dimensional electron gas (2DEG). Prepared samples were an In0.75Ga0.25As/In0.75Al0.25As modulation-doped narrow-gap heterojunction grown by molecular beam epitaxy (MBE). For the determination of spin-orbit interaction parameter, α, we measured Shubnikov-de Haas (SdH) oscillations at 1.5 K. We confirmed a modulation of α when a gate voltage was applied. We also carried out spin-injection experiments using a multi-terminal geometry sample, which had two different widths Ni40Fe60 electrodes. We observed a spin-valve like effect in a source-drain resistance of ∼ 0.1% as well as a resistance hysteresis behavior of ∼ 12% in non-local geometry below 20 K. These results are the first step to realize an active spintronic device, such as spin-FET.

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