Study of Atomic Layer Deposition of hafnium oxide as an insulation layer on Cu for potential flip chip integration

Alaric Yohei Kawai; Shingo Kataza; Shuichi Shoji; Jun Mizuno

doi:10.1109/ICSJ52620.2021.9648884

Study of Atomic Layer Deposition of hafnium oxide as an insulation layer on Cu for potential flip chip integration

Alaric Yohei Kawai, Shingo Kataza, Shuichi Shoji, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultra thin films of hafnium oxide were deposited on copper using Atomic Layer Deposition. The physical insulation provided by the film was tested using Neutral Salt Spray testing. We examine the role of the thin film in preventing the oxidation of Cu.

Original language	English
Title of host publication	2021 IEEE CPMT Symposium Japan, ICSJ 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	94-97
Number of pages	4
ISBN (Electronic)	9781665440790
DOIs	https://doi.org/10.1109/ICSJ52620.2021.9648884
Publication status	Published - 2021
Event	10th IEEE CPMT Symposium Japan, ICSJ 2021 - Kyoto, Japan Duration: 2021 Nov 10 → 2021 Nov 12

Publication series

Name	2021 IEEE CPMT Symposium Japan, ICSJ 2021

Conference

Conference	10th IEEE CPMT Symposium Japan, ICSJ 2021
Country/Territory	Japan
City	Kyoto
Period	21/11/10 → 21/11/12

Keywords

Atomic layer deposition
Cu oxidation
Insulation
Thin films

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Control and Systems Engineering
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSJ52620.2021.9648884

Cite this

Kawai, A. Y., Kataza, S., Shoji, S., & Mizuno, J. (2021). Study of Atomic Layer Deposition of hafnium oxide as an insulation layer on Cu for potential flip chip integration. In 2021 IEEE CPMT Symposium Japan, ICSJ 2021 (pp. 94-97). (2021 IEEE CPMT Symposium Japan, ICSJ 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSJ52620.2021.9648884

Study of Atomic Layer Deposition of hafnium oxide as an insulation layer on Cu for potential flip chip integration. / Kawai, Alaric Yohei; Kataza, Shingo; Shoji, Shuichi et al.

2021 IEEE CPMT Symposium Japan, ICSJ 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 94-97 (2021 IEEE CPMT Symposium Japan, ICSJ 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawai, AY, Kataza, S, Shoji, S & Mizuno, J 2021, Study of Atomic Layer Deposition of hafnium oxide as an insulation layer on Cu for potential flip chip integration. in 2021 IEEE CPMT Symposium Japan, ICSJ 2021. 2021 IEEE CPMT Symposium Japan, ICSJ 2021, Institute of Electrical and Electronics Engineers Inc., pp. 94-97, 10th IEEE CPMT Symposium Japan, ICSJ 2021, Kyoto, Japan, 21/11/10. https://doi.org/10.1109/ICSJ52620.2021.9648884

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abstract = "Ultra thin films of hafnium oxide were deposited on copper using Atomic Layer Deposition. The physical insulation provided by the film was tested using Neutral Salt Spray testing. We examine the role of the thin film in preventing the oxidation of Cu.",

keywords = "Atomic layer deposition, Cu oxidation, Insulation, Thin films",

author = "Kawai, {Alaric Yohei} and Shingo Kataza and Shuichi Shoji and Jun Mizuno",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 10th IEEE CPMT Symposium Japan, ICSJ 2021 ; Conference date: 10-11-2021 Through 12-11-2021",

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Study of Atomic Layer Deposition of hafnium oxide as an insulation layer on Cu for potential flip chip integration

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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