Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

K. Kawabata, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz- Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications.

Original languageEnglish
Title of host publication2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages55-58
Number of pages4
DOIs
Publication statusPublished - 2011 Nov 1
Externally publishedYes
Event2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
Duration: 2011 Sep 82011 Sep 10

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
CountryJapan
CityOsaka
Period11/9/811/9/10

Keywords

  • MRAM
  • domain wall movement
  • spin transfer torque

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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    Kawabata, K., Tanizawa, M., Ishikawa, K., Inoue, Y., Inuishi, M., & Nishimura, T. (2011). Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 55-58). [6035048] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035048