Study of defects in silicon dioxide films on Si(100) by a variable-energy positron beam

M. Fujinami, N. B. Chilton, K. Ishii, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    Amorphous SiO2 films grown by both thermal oxidation and plasma chemical vapor deposition (CVD) in a tetraethylorthosilicate and O2 atmosphere were studied using variable-energy positron annihilation spectroscopy and infrared (IR) spectroscopy. For thermally grown SiO2 layers with growth temperatures of over 1000 °C it was found that the measured Doppler broadening parameter was identical for both wet and dry growth atmospheres. The measured Doppler broadening parameter in the case of SiO2 prepared by plasma CVD was found to be strongly influenced by the substrate temperature during deposition. For a substrate growth temperature of 600 °C, the data are essentially identical to those of the thermally grown oxide layers. IR analysis revealed that the concentration of Si-OH in the SiO2 layer is affected by the substrate temperature during growth. The level of the Doppler broadening parameter in the SiO2 film exhibited changes that can be correlated with this Si-OH concentration. We thus show that the concentration of Si-OH in amorphous SiO2 film is a factor that may affect the Doppler broadening parameter.

    Original languageEnglish
    Pages (from-to)5406-5409
    Number of pages4
    JournalJournal of Applied Physics
    Volume74
    Issue number9
    DOIs
    Publication statusPublished - 1993

    Fingerprint

    positrons
    silicon dioxide
    defects
    vapor deposition
    atmospheres
    temperature
    energy
    positron annihilation
    infrared spectroscopy
    oxidation
    oxides
    spectroscopy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Study of defects in silicon dioxide films on Si(100) by a variable-energy positron beam. / Fujinami, M.; Chilton, N. B.; Ishii, K.; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 74, No. 9, 1993, p. 5406-5409.

    Research output: Contribution to journalArticle

    Fujinami, M. ; Chilton, N. B. ; Ishii, K. ; Ohki, Yoshimichi. / Study of defects in silicon dioxide films on Si(100) by a variable-energy positron beam. In: Journal of Applied Physics. 1993 ; Vol. 74, No. 9. pp. 5406-5409.
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    AU - Chilton, N. B.

    AU - Ishii, K.

    AU - Ohki, Yoshimichi

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    N2 - Amorphous SiO2 films grown by both thermal oxidation and plasma chemical vapor deposition (CVD) in a tetraethylorthosilicate and O2 atmosphere were studied using variable-energy positron annihilation spectroscopy and infrared (IR) spectroscopy. For thermally grown SiO2 layers with growth temperatures of over 1000 °C it was found that the measured Doppler broadening parameter was identical for both wet and dry growth atmospheres. The measured Doppler broadening parameter in the case of SiO2 prepared by plasma CVD was found to be strongly influenced by the substrate temperature during deposition. For a substrate growth temperature of 600 °C, the data are essentially identical to those of the thermally grown oxide layers. IR analysis revealed that the concentration of Si-OH in the SiO2 layer is affected by the substrate temperature during growth. The level of the Doppler broadening parameter in the SiO2 film exhibited changes that can be correlated with this Si-OH concentration. We thus show that the concentration of Si-OH in amorphous SiO2 film is a factor that may affect the Doppler broadening parameter.

    AB - Amorphous SiO2 films grown by both thermal oxidation and plasma chemical vapor deposition (CVD) in a tetraethylorthosilicate and O2 atmosphere were studied using variable-energy positron annihilation spectroscopy and infrared (IR) spectroscopy. For thermally grown SiO2 layers with growth temperatures of over 1000 °C it was found that the measured Doppler broadening parameter was identical for both wet and dry growth atmospheres. The measured Doppler broadening parameter in the case of SiO2 prepared by plasma CVD was found to be strongly influenced by the substrate temperature during deposition. For a substrate growth temperature of 600 °C, the data are essentially identical to those of the thermally grown oxide layers. IR analysis revealed that the concentration of Si-OH in the SiO2 layer is affected by the substrate temperature during growth. The level of the Doppler broadening parameter in the SiO2 film exhibited changes that can be correlated with this Si-OH concentration. We thus show that the concentration of Si-OH in amorphous SiO2 film is a factor that may affect the Doppler broadening parameter.

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