Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime

Hisayo Sasaki Momose, Hideki Kimijima, Shin ichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Takashi Yoshitomi, Eiji Morifuji, Shin ichi Nakamura, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai

Research output: Contribution to journalConference article

23 Citations (Scopus)

Abstract

Flicker noise characteristics of 1.5 nm direct-tunneling gate oxide n- and p-MOSFETs have been investigated. It was confirmed that in the shorter gate length region, less than 0.2 μm, the flicker noise decreased with the decrease in gate oxide thickness even in the direct-tunneling regime. On the contrary, it was found that with gate length larger than 0.45 μm, the flicker noise becomes larger than that of the thicker gate oxide MOSFETs due to large gate leakage current. The degradation of flicker noise after charge injection was also compared for MOSFETs with various gate oxide thickness.

Original languageEnglish
Pages (from-to)923-926
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Momose, H. S., Kimijima, H., Ishizuka, S. I., Miyahara, Y., Ohguro, T., Yoshitomi, T., Morifuji, E., Nakamura, S. I., Morimoto, T., Katsumata, Y., & Iwai, H. (1998). Study of flicker noise in n- and p-MOSFETs with ultra-thin gate oxide in the direct-tunneling regime. Technical Digest - International Electron Devices Meeting, 923-926.