Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure

A. Kawaharazuka, T. Saku, C. A. Kikuchi, Y. Horikoshi, Y. Hirayama

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.

Original languageEnglish
Pages (from-to)663-666
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
Publication statusPublished - 2002 Mar

Fingerprint

aluminum gallium arsenides
Heterojunctions
Two dimensional electron gas
Surface charge
Charge density
Fermi level
Fermi surfaces
electron gas
gallium arsenide
Temperature

Keywords

  • AlGaAs/GaAs heterostructute
  • Frozen surface
  • Mid-gap pinning
  • Surface state

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure. / Kawaharazuka, A.; Saku, T.; Kikuchi, C. A.; Horikoshi, Y.; Hirayama, Y.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 03.2002, p. 663-666.

Research output: Contribution to journalArticle

Kawaharazuka, A. ; Saku, T. ; Kikuchi, C. A. ; Horikoshi, Y. ; Hirayama, Y. / Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure. In: Physica E: Low-Dimensional Systems and Nanostructures. 2002 ; Vol. 13, No. 2-4. pp. 663-666.
@article{ee32d4795d404b24896ecd1dc4d75ecc,
title = "Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure",
abstract = "We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.",
keywords = "AlGaAs/GaAs heterostructute, Frozen surface, Mid-gap pinning, Surface state",
author = "A. Kawaharazuka and T. Saku and Kikuchi, {C. A.} and Y. Horikoshi and Y. Hirayama",
year = "2002",
month = "3",
doi = "10.1016/S1386-9477(02)00253-9",
language = "English",
volume = "13",
pages = "663--666",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "2-4",

}

TY - JOUR

T1 - Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure

AU - Kawaharazuka, A.

AU - Saku, T.

AU - Kikuchi, C. A.

AU - Horikoshi, Y.

AU - Hirayama, Y.

PY - 2002/3

Y1 - 2002/3

N2 - We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.

AB - We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.

KW - AlGaAs/GaAs heterostructute

KW - Frozen surface

KW - Mid-gap pinning

KW - Surface state

UR - http://www.scopus.com/inward/record.url?scp=0036493142&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036493142&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00253-9

DO - 10.1016/S1386-9477(02)00253-9

M3 - Article

AN - SCOPUS:0036493142

VL - 13

SP - 663

EP - 666

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

ER -