Abstract
We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.
| Original language | English |
|---|---|
| Pages (from-to) | 663-666 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 13 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2002 Mar |
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Keywords
- AlGaAs/GaAs heterostructute
- Frozen surface
- Mid-gap pinning
- Surface state
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure. / Kawaharazuka, A.; Saku, T.; Kikuchi, C. A.; Horikoshi, Y.; Hirayama, Y.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 03.2002, p. 663-666.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure
AU - Kawaharazuka, A.
AU - Saku, T.
AU - Kikuchi, C. A.
AU - Horikoshi, Y.
AU - Hirayama, Y.
PY - 2002/3
Y1 - 2002/3
N2 - We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.
AB - We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.
KW - AlGaAs/GaAs heterostructute
KW - Frozen surface
KW - Mid-gap pinning
KW - Surface state
UR - http://www.scopus.com/inward/record.url?scp=0036493142&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036493142&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(02)00253-9
DO - 10.1016/S1386-9477(02)00253-9
M3 - Article
VL - 13
SP - 663
EP - 666
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -