Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure

A. Kawaharazuka; T. Saku; C. A. Kikuchi; Y. Horikoshi; Y. Hirayama

doi:10.1016/S1386-9477(02)00253-9

Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure

A. Kawaharazuka, T. Saku, C. A. Kikuchi, Y. Horikoshi, Y. Hirayama

Waseda Research Institute for Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.

Original language	English
Pages (from-to)	663-666
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00253-9
Publication status	Published - 2002 Mar

Keywords

AlGaAs/GaAs heterostructute
Frozen surface
Mid-gap pinning
Surface state

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure",

abstract = "We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.",

keywords = "AlGaAs/GaAs heterostructute, Frozen surface, Mid-gap pinning, Surface state",

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T1 - Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure

AU - Kawaharazuka, A.

AU - Saku, T.

AU - Kikuchi, C. A.

AU - Horikoshi, Y.

AU - Hirayama, Y.

PY - 2002/3

Y1 - 2002/3

N2 - We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.

AB - We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.

KW - AlGaAs/GaAs heterostructute

KW - Frozen surface

KW - Mid-gap pinning

KW - Surface state

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