TY - GEN
T1 - Study of high power generation in UTC-PD at 110-210 GHz
AU - Umezawa, Toshimasa
AU - Kanno, Atsushi
AU - Akahane, Kouichi
AU - Matsumoto, Atsushi
AU - Yamamoto, Naokatsu
AU - Kawanishi, Tetsuya
N1 - Funding Information:
This study was conducted as part of a research project titled “R&D to Expand Radio Frequency Resources,” which was supported by the Japanese Government through the Ministry of Internal Affairs and Communications. This work was partially supported by the MIC/SCOPE #165003010.
PY - 2018
Y1 - 2018
N2 - We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75-110 GHz) and G-band (140-220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.
AB - We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75-110 GHz) and G-band (140-220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.
KW - THz
KW - bias-free
KW - frequency response
KW - high output
KW - uni-travelling carrier photodetector
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U2 - 10.1117/12.2287589
DO - 10.1117/12.2287589
M3 - Conference contribution
AN - SCOPUS:85048873195
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
A2 - Sadwick, Laurence P.
A2 - Yang, Tianxin
PB - SPIE
T2 - 2017 Conference on Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
Y2 - 29 January 2018 through 1 February 2018
ER -