Study of high power generation in UTC-PD at 110-210 GHz

Toshimasa Umezawa, Atsushi Kanno, Kouichi Akahane, Atsushi Matsumoto, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75-110 GHz) and G-band (140-220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.

Original languageEnglish
Title of host publicationTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
EditorsLaurence P. Sadwick, Tianxin Yang
PublisherSPIE
ISBN (Electronic)9781510615472
DOIs
Publication statusPublished - 2018
Event2017 Conference on Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI - San Francisco, United States
Duration: 2018 Jan 292018 Feb 1

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10531
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other2017 Conference on Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
CountryUnited States
CitySan Francisco
Period18/1/2918/2/1

Keywords

  • THz
  • bias-free
  • frequency response
  • high output
  • uni-travelling carrier photodetector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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