Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channeling

N. Hayashi, R. Suzuki, H. Watanabe, I. Sakamoto, Naoto Kobayashi, T. Mikado, T. Yamazaki, K. Kuriyama

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2 Citations (Scopus)

Abstract

RBS channeling analysis and positron annihilation measurements were used to study ion beam induced crystallization in silicon. The epitaxial regrowth of amorphous surface layers in 〈100〉 oriented Si substrate has been performed under irradiation with 400 keV Ar+ ions at the temperature of 400°C. A slow positron pulsing system was used to measure lifetime spectra in the recrystallised near-surface region, and the lifetime was found to increase by 40-70 ps, compared to the as-amorphized state, whereas RBS channeling shows a crystalline recovery from the amorphous structure. The results indicate that vacancy migration and clustering are promoted during the epitaxial recrystallization.

Original languageEnglish
Pages (from-to)1006-1009
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume80-81
Issue numberPART 2
DOIs
Publication statusPublished - 1993
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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    Hayashi, N., Suzuki, R., Watanabe, H., Sakamoto, I., Kobayashi, N., Mikado, T., Yamazaki, T., & Kuriyama, K. (1993). Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channeling. Nuclear Inst. and Methods in Physics Research, B, 80-81(PART 2), 1006-1009. https://doi.org/10.1016/0168-583X(93)90726-M