Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Goro Sato, Taro Fukuyama, Shin Watanabe, Hirokazu Ikeda, Masayuki Ohta, Shin'Nosuke Ishikawa, Tadayuki Takahashi, Hiroyuki Shiraki, Ryoichi Ohno

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

Original languageEnglish
Pages (from-to)149-152
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume652
Issue number1
DOIs
Publication statusPublished - 2011 Oct 1

Keywords

  • CdTe
  • Deep acceptor
  • Gamma-ray
  • Polarization
  • Schottky diode
  • X-ray

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

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