Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Goro Sato*, Taro Fukuyama, Shin Watanabe, Hirokazu Ikeda, Masayuki Ohta, Shin'Nosuke Ishikawa, Tadayuki Takahashi, Hiroyuki Shiraki, Ryoichi Ohno

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

Original languageEnglish
Pages (from-to)149-152
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume652
Issue number1
DOIs
Publication statusPublished - 2011 Oct 1

Keywords

  • CdTe
  • Deep acceptor
  • Gamma-ray
  • Polarization
  • Schottky diode
  • X-ray

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

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