TY - JOUR
T1 - Study of self-align doped channel structure for low power and low 1/f noise operation
AU - Yoshitomi, Takashi
AU - Kimijima, Hideki
AU - Ishizuka, Shinnichiro
AU - Miyahara, Yasunori
AU - Ohguro, Tatsuya
AU - Morifuji, Eiji
AU - Morimoto, Toyota
AU - Momose, Hisayo Sasaki
AU - Katsumata, Yasuhiro
AU - Iwai, Hiroshi
PY - 1998
Y1 - 1998
N2 - Self-align doped channel (SADC) which can minimize the 1/f noise and junction capacitance is studied. Several severe expected problems such as the controllability of the diffusion and TDDB of the gate oxide are overcome to be seriously considered for the products. In addition, this structure is attractive for small geometry high performance deice with low capacitance and low 1/f noise.
AB - Self-align doped channel (SADC) which can minimize the 1/f noise and junction capacitance is studied. Several severe expected problems such as the controllability of the diffusion and TDDB of the gate oxide are overcome to be seriously considered for the products. In addition, this structure is attractive for small geometry high performance deice with low capacitance and low 1/f noise.
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M3 - Conference article
AN - SCOPUS:0031624234
SN - 0743-1562
SP - 98
EP - 99
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
T2 - Proceedings of the 1998 Symposium on VLSI Technology
Y2 - 9 June 1998 through 11 June 1998
ER -