Study of single crystal CuInSe<inf>2</inf> thin films and CuGaSe<inf>2</inf>/CuInSe<inf>2</inf> single quantum well grown by molecular beam epitaxy

Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    High quality CuGaSe<inf>2</inf> and CuInSe<inf>2</inf> single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe<inf>2</inf> is grown on CuInSe<inf>2</inf> at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe<inf>2</inf>/CuInSe<inf>2</inf>. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe<inf>2</inf>/CuInSe<inf>2</inf> single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

    Original languageEnglish
    Pages (from-to)203-206
    Number of pages4
    JournalJournal of Crystal Growth
    Volume425
    DOIs
    Publication statusPublished - 2015 Jul 28

    Fingerprint

    Molecular beam epitaxy
    Semiconductor quantum wells
    molecular beam epitaxy
    quantum wells
    Single crystals
    Thin films
    single crystals
    Growth temperature
    thin films
    Deposition rates
    Epitaxial growth
    epitaxy
    Heterojunctions
    heterojunctions
    Photoluminescence
    Crystalline materials
    photoluminescence
    temperature
    Temperature
    gallium arsenide

    Keywords

    • A1. RHEED
    • A1. XRD
    • A3. CGS/CIS single quantum well
    • A3. MEE
    • B3. Solar cell
    • PL
    • Thin-film chalcopyrite

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Materials Chemistry
    • Inorganic Chemistry

    Cite this

    Study of single crystal CuInSe<inf>2</inf> thin films and CuGaSe<inf>2</inf>/CuInSe<inf>2</inf> single quantum well grown by molecular beam epitaxy. / Thiru, Sathiabama; Asakawa, Masaki; Honda, Kazuki; Kawaharazuka, Atsushi; Tackeuchi, Atsushi; Makimoto, Toshiki; Horikoshi, Yoshiji.

    In: Journal of Crystal Growth, Vol. 425, 28.07.2015, p. 203-206.

    Research output: Contribution to journalArticle

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    abstract = "High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.",
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    AU - Thiru, Sathiabama

    AU - Asakawa, Masaki

    AU - Honda, Kazuki

    AU - Kawaharazuka, Atsushi

    AU - Tackeuchi, Atsushi

    AU - Makimoto, Toshiki

    AU - Horikoshi, Yoshiji

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    AB - High quality CuGaSe2 and CuInSe2 single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe2 is grown on CuInSe2 at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe2/CuInSe2. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe2/CuInSe2 single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

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