Study of single crystal CuInSe<inf>2</inf> thin films and CuGaSe<inf>2</inf>/CuInSe<inf>2</inf> single quantum well grown by molecular beam epitaxy

Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi

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    6 Citations (Scopus)


    High quality CuGaSe<inf>2</inf> and CuInSe<inf>2</inf> single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular beam epitaxy system. When CuGaSe<inf>2</inf> is grown on CuInSe<inf>2</inf> at moderate temperatures, severe interdiffusion takes place at the heterojunction of CuGaSe<inf>2</inf>/CuInSe<inf>2</inf>. This problem has been solved by optimizing the growth temperature and deposition rates of the constituent elements. Thus, we have successfully grown CuGaSe<inf>2</inf>/CuInSe<inf>2</inf> single quantum well with sharp interfaces on GaAs (001) for the first time. Intense photoluminescence from the single quantum well with 10 nm well width is demonstrated.

    Original languageEnglish
    Pages (from-to)203-206
    Number of pages4
    JournalJournal of Crystal Growth
    Publication statusPublished - 2015 Jul 28



    • A1. RHEED
    • A1. XRD
    • A3. CGS/CIS single quantum well
    • A3. MEE
    • B3. Solar cell
    • PL
    • Thin-film chalcopyrite

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Materials Chemistry
    • Inorganic Chemistry

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